Биполярный транзистор MRF860 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: MRF860
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 71 W
Макcимально допустимое напряжение коллектор-база (Ucb): 60 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 30 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 4 V
Макcимальный постоянный ток коллектора (Ic): 1.9 A
Предельная температура PN-перехода (Tj): 200 °C
Граничная частота коэффициента передачи тока (ft): 960 MHz
Ёмкость коллекторного перехода (Cc): 21 pf
Статический коэффициент передачи тока (hfe): 30
Корпус транзистора: CASE395B-01
MRF860 Datasheet (PDF)
mrf860.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF860/DThe RF LineNPN SiliconMRF860RF Power TransistorDesigned for 24 Volt UHF largesignal, common emitter, class A linearamplifier applications in industrial and commercial equipment operating in therange of 800960 MHz.CLASS A800960 MHz Specified for VCE = 24 Vdc, IC = 1.9 Adc Characteristics13.7
mrf860re.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF860/DThe RF LineNPN SiliconMRF860RF Power TransistorDesigned for 24 Volt UHF largesignal, common emitter, class A linearamplifier applications in industrial and commercial equipment operating in therange of 800960 MHz.CLASS A800960 MHz Specified for VCE = 24 Vdc, IC = 1.9 Adc Characteristics13.7
mrf862 .pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF862/DThe RF LineNPN SiliconMRF862RF Power TransistorDesigned for 24 Volt UHF largesignal, common emitter, class A linearamplifier applications in industrial and commercial equipment operating in therange of 800960 MHz. CLASS A800960 MHz Specified for VCE = 24 Vdc, IC = 5 Adc Characteristics36 W (C
mrf861.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF861/DThe RF LineNPN SiliconMRF861RF Power TransistorDesigned for 24 Volt UHF largesignal, common emitter, class A linearamplifier applications in industrial and commercial equipment operating in therange of 800960 MHz.CLASS A800960 MHz Specified for VCE = 24 Vdc, IC = 3.75 Adc Characteristics27
mrf861re.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF861/DThe RF LineNPN SiliconMRF861RF Power TransistorDesigned for 24 Volt UHF largesignal, common emitter, class A linearamplifier applications in industrial and commercial equipment operating in therange of 800960 MHz.CLASS A800960 MHz Specified for VCE = 24 Vdc, IC = 3.75 Adc Characteristics27
mrf862.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF862/DThe RF LineNPN SiliconMRF862RF Power TransistorDesigned for 24 Volt UHF largesignal, common emitter, class A linearamplifier applications in industrial and commercial equipment operating in therange of 800960 MHz. CLASS A800960 MHz Specified for VCE = 24 Vdc, IC = 5 Adc Characteristics36 W (C
mrf862re.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF862/DThe RF LineNPN SiliconMRF862RF Power TransistorMotorola Preferred DeviceDesigned for 24 Volt UHF largesignal, common emitter, class A linearamplifier applications in industrial and commercial equipment operating in therange of 800960 MHz. CLASS A800960 MHz Specified for VCE = 24 Vdc, IC = 5 A
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Список транзисторов
Обновления
BJT: 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050 | HSA1037AKS