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2SC3080 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SC3080
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.3 W
   Tensión colector-base (Vcb): 30 V
   Tensión colector-emisor (Vce): 19 V
   Tensión emisor-base (Veb): 4 V
   Corriente del colector DC máxima (Ic): 0.05 A
   Temperatura operativa máxima (Tj): 125 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 600 MHz
   Capacitancia de salida (Cc): 1.2 pF
   Ganancia de corriente contínua (hfe): 39
   Paquete / Cubierta: FTR

 Búsqueda de reemplazo de transistor bipolar 2SC3080

 

2SC3080 Datasheet (PDF)

 ..1. Size:180K  1
2sc3080 2sc4041.pdf

2SC3080
2SC3080

 ..2. Size:111K  rohm
2sc3080.pdf

2SC3080

 0.1. Size:180K  1
2sc3080m 2sc4014.pdf

2SC3080
2SC3080

 0.2. Size:91K  1
2sc3078m 2sc3079m 2sc3080m.pdf

2SC3080
2SC3080

 8.1. Size:93K  sanyo
2sc3087.pdf

2SC3080
2SC3080

Ordering number:EN1011BNPN Triple Diffused Planar Silicon Transistor2SC3087500V/5A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage (VCBO 800V).unit:mm Fast switching speed.2010C Wide ASO.[2SC3087]1 : BaseJEDEC : TO-220AB2 : CollectorEIAJ : SC-463 : EmitterSpecificationsAbsolute Maximum Ratings at Ta = 25CParame

 8.2. Size:96K  sanyo
2sc3086.pdf

2SC3080
2SC3080

Ordering number:EN1010BNPN Triple Diffused Planar Silicon Transistor2SC3086500V/3A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage (VCBO 800V).unit:mm Fast switching speed.2010C Wide ASO.[2SC3086]1 : BaseJEDEC : TO-220AB2 : CollectorEIAJ : SC-463 : EmitterSpecificationsAbsolute Maximum Ratings at Ta = 25CParame

 8.3. Size:94K  sanyo
2sc3088.pdf

2SC3080
2SC3080

Ordering number:EN1017BNPN Triple Diffused Planar Silicon Transistor2SC3088500V/4A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage (VCBO 800V).unit:mm Fast switching speed.2022A Wide ASO.[2SC3088]1 : Base2 : Collector3 : EmitterSANYO : TO-3PBSpecificationsAbsolute Maximum Ratings at Ta = 25CParameter Symbol Condi

 8.4. Size:98K  sanyo
2sc3083.pdf

2SC3080
2SC3080

Ordering number:EN947BNPN Triple Diffused Planar Silicon Transistor2SC3083400V/6A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage (VCBO 500V).unit:mm Fast switching speed.2022A Wide ASO.[2SC3083]1 : Base2 : Collector3 : EmitterSANYO : TO-3PBSpecificationsAbsolute Maximum Ratings at Ta = 25CParameter Symbol Condit

 8.5. Size:96K  sanyo
2sc3089.pdf

2SC3080
2SC3080

Ordering number:EN1012ANPN Triple Diffused Planar Silicon Transistor2SC3089500V/7A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage (VCBO 800V).unit:mm Fast switching speed.2022A Wide ASO.[2SC3089]1 : Base2 : Collector3 : EmitterSANYO : TO-3PBSpecificationsAbsolute Maximum Ratings at Ta = 25CParameter Symbol Condi

 8.6. Size:235K  jmnic
2sc3083.pdf

2SC3080
2SC3080

JMnic Product Specification Silicon NPN Power Transistors 2SC3083 DESCRIPTION With TO-3PN package High breakdown voltage (VCBO500V) Fast switching speed Wide ASOSafe Operating Area APPLICATIONS 400V/6A switching regulator applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol

 8.7. Size:220K  jmnic
2sc3089.pdf

2SC3080
2SC3080

JMnic Product Specification Silicon NPN Power Transistors 2SC3089 DESCRIPTION With TO-3PN package High breakdown voltage (VCBO800V) Fast switching speed Wide ASOSafe Operating Area APPLICATIONS 500V/7A Switching Regulator Applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol

 8.8. Size:193K  inchange semiconductor
2sc3085.pdf

2SC3080
2SC3080

isc Silicon NPN Power Transistor 2SC3085DESCRIPTIONHigh Breakdown Voltage-: V = 500V(Min)(BR)CBOFast Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base

 8.9. Size:195K  inchange semiconductor
2sc3087.pdf

2SC3080
2SC3080

isc Silicon NPN Power Transistor 2SC3087DESCRIPTIONHigh Breakdown Voltage-: V = 800V(Min)(BR)CBOFast Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base

 8.10. Size:216K  inchange semiconductor
2sc3086.pdf

2SC3080
2SC3080

isc Silicon NPN Power Transistor 2SC3086DESCRIPTIONHigh Breakdown Voltage-: V = 800V(Min)(BR)CBOFast Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base

 8.11. Size:202K  inchange semiconductor
2sc3088.pdf

2SC3080
2SC3080

isc Silicon NPN Power Transistor 2SC3088DESCRIPTIONHigh Breakdown Voltage-: V = 800V(Min)(BR)CBOFast Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base

 8.12. Size:220K  inchange semiconductor
2sc3083.pdf

2SC3080
2SC3080

isc Silicon NPN Power Transistor 2SC3083DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and general purposeapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBO

 8.13. Size:202K  inchange semiconductor
2sc3089.pdf

2SC3080
2SC3080

isc Silicon NPN Power Transistor 2SC3089DESCRIPTIONHigh Breakdown Voltage-: V = 800V(Min)(BR)CBOFast Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base

Otros transistores... TP5001P3 , TS13005CK , WT955 , 2SA1015H , 2SA73H , 2SA73L , S9012J , S9018L , 2222A , 2SD661A , 2SD662B , D965-KEHE , GN1A3Q , , , , .

 

 
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Recientemente añadidas las descripciónes de los transistores:

BJT: GN1A3Q | D965-KEHE | 2SD662B | 2SD661A | 2SC3080 | S9018L | S9012J | 2SA73L | 2SA73H | 2SA1015H | WT955 | TS13005CK | TP5001P3 | SS8550W-L | SS8550W-J | SS8550W-H | SS8550E | SS8550D | SS8550C | SS8050E | SS8050D

 

 

 
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