2SC3080 datasheet, аналоги, основные параметры
Наименование производителя: 2SC3080 📄📄
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 0.3 W
Макcимально допустимое напряжение коллектор-база (Ucb): 30 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 19 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 4 V
Макcимальный постоянный ток коллектора (Ic): 0.05 A
Предельная температура PN-перехода (Tj): 125 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 600 MHz
Ёмкость коллекторного перехода (Cc): 1.2 pf
Статический коэффициент передачи тока (hFE): 39
Корпус транзистора: FTR
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Аналоги (замена) для 2SC3080
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2SC3080 даташит
8.1. Size:93K sanyo
2sc3087.pdf 
Ordering number EN1011B NPN Triple Diffused Planar Silicon Transistor 2SC3087 500V/5A Switching Regulator Applications Features Package Dimensions High breakdown voltage (VCBO 800V). unit mm Fast switching speed. 2010C Wide ASO. [2SC3087] 1 Base JEDEC TO-220AB 2 Collector EIAJ SC-46 3 Emitter Specifications Absolute Maximum Ratings at Ta = 25 C Parame
8.2. Size:96K sanyo
2sc3086.pdf 
Ordering number EN1010B NPN Triple Diffused Planar Silicon Transistor 2SC3086 500V/3A Switching Regulator Applications Features Package Dimensions High breakdown voltage (VCBO 800V). unit mm Fast switching speed. 2010C Wide ASO. [2SC3086] 1 Base JEDEC TO-220AB 2 Collector EIAJ SC-46 3 Emitter Specifications Absolute Maximum Ratings at Ta = 25 C Parame
8.3. Size:94K sanyo
2sc3088.pdf 
Ordering number EN1017B NPN Triple Diffused Planar Silicon Transistor 2SC3088 500V/4A Switching Regulator Applications Features Package Dimensions High breakdown voltage (VCBO 800V). unit mm Fast switching speed. 2022A Wide ASO. [2SC3088] 1 Base 2 Collector 3 Emitter SANYO TO-3PB Specifications Absolute Maximum Ratings at Ta = 25 C Parameter Symbol Condi
8.4. Size:98K sanyo
2sc3083.pdf 
Ordering number EN947B NPN Triple Diffused Planar Silicon Transistor 2SC3083 400V/6A Switching Regulator Applications Features Package Dimensions High breakdown voltage (VCBO 500V). unit mm Fast switching speed. 2022A Wide ASO. [2SC3083] 1 Base 2 Collector 3 Emitter SANYO TO-3PB Specifications Absolute Maximum Ratings at Ta = 25 C Parameter Symbol Condit
8.5. Size:96K sanyo
2sc3089.pdf 
Ordering number EN1012A NPN Triple Diffused Planar Silicon Transistor 2SC3089 500V/7A Switching Regulator Applications Features Package Dimensions High breakdown voltage (VCBO 800V). unit mm Fast switching speed. 2022A Wide ASO. [2SC3089] 1 Base 2 Collector 3 Emitter SANYO TO-3PB Specifications Absolute Maximum Ratings at Ta = 25 C Parameter Symbol Condi
8.6. Size:235K jmnic
2sc3083.pdf 
JMnic Product Specification Silicon NPN Power Transistors 2SC3083 DESCRIPTION With TO-3PN package High breakdown voltage (VCBO 500V) Fast switching speed Wide ASO Safe Operating Area APPLICATIONS 400V/6A switching regulator applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol
8.7. Size:220K jmnic
2sc3089.pdf 
JMnic Product Specification Silicon NPN Power Transistors 2SC3089 DESCRIPTION With TO-3PN package High breakdown voltage (VCBO 800V) Fast switching speed Wide ASO Safe Operating Area APPLICATIONS 500V/7A Switching Regulator Applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol
8.8. Size:193K inchange semiconductor
2sc3085.pdf 
isc Silicon NPN Power Transistor 2SC3085 DESCRIPTION High Breakdown Voltage- V = 500V(Min) (BR)CBO Fast Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base
8.9. Size:195K inchange semiconductor
2sc3087.pdf 
isc Silicon NPN Power Transistor 2SC3087 DESCRIPTION High Breakdown Voltage- V = 800V(Min) (BR)CBO Fast Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base
8.10. Size:216K inchange semiconductor
2sc3086.pdf 
isc Silicon NPN Power Transistor 2SC3086 DESCRIPTION High Breakdown Voltage- V = 800V(Min) (BR)CBO Fast Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base
8.11. Size:202K inchange semiconductor
2sc3088.pdf 
isc Silicon NPN Power Transistor 2SC3088 DESCRIPTION High Breakdown Voltage- V = 800V(Min) (BR)CBO Fast Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base
8.12. Size:220K inchange semiconductor
2sc3083.pdf 
isc Silicon NPN Power Transistor 2SC3083 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBO
8.13. Size:202K inchange semiconductor
2sc3089.pdf 
isc Silicon NPN Power Transistor 2SC3089 DESCRIPTION High Breakdown Voltage- V = 800V(Min) (BR)CBO Fast Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base
Другие транзисторы: TP5001P3, TS13005CK, WT955, 2SA1015H, 2SA73H, 2SA73L, S9012J, S9018L, 2SD2012, 2SD661A, 2SD662B, D965-KEHE, GN1A3Q, SL13003, CD8050B, CD8050C, CD8050D
