2SA1661 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SA1661 📄📄
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.5 W
Tensión colector-base (Vcb): 120 V
Tensión colector-emisor (Vce): 120 V
Corriente del colector DC máxima (Ic): 0.8 A
Temperatura operativa máxima (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 120 MHz
Ganancia de corriente contínua (hFE): 160
Encapsulados: SOT89
📄📄 Copiar
Búsqueda de reemplazo de 2SA1661
- Selecciónⓘ de transistores por parámetros
2SA1661 datasheet
..1. Size:1499K jiangsu
2sa1661.pdf 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SA1661 TRANSISTOR (PNP) 1. BASE FEATURES 2. COLLECTOR Small Flat Package High Current Application 3. EMITTER High Voltage High Transition Frequency MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -120 V
..2. Size:183K htsemi
2sa1661.pdf
2SA1 661 SOT-89-3L TRANSISTOR(PNP) 1. BASE FEATURES 2. COLLECTOR Small Flat Package High Current Application 3. EMITTER High Voltage High Transition Frequency MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -5 V IC Collector Current -0
0.1. Size:625K semtech
st2sa1661u.pdf
ST 2SA1661U PNP Silicon Epitaxial Planar Transistor for high current application Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Collector Base Voltage -VCBO 120 V Collector Emitter Voltage -VCEO 120 V Emitter Base Voltage -VEBO 5 V Collector Current -IC 800 mA Base Current -IB 160 mA 0.5 Ptot W Total Power Dissipation 1 1) Junction Temperature Tj 150
8.1. Size:129K sanyo
2sa1669.pdf
Ordering number EN2972 PNP Epitaxial Planar Silicon Transistor 2SA1669 High-Frequency Amplifier Applications Features Package Dimensions High cutoff frequnecy fT=3.0GHz typ. unit mm High power gain MAG=11dB typ (f=0.9GHz) 2018A Small noise figure NF=2.0dB typ (f=0.9GHz) [2SA1669] C Collector B Base E Emitter SANYO CP Specifications Absolute Maximum Rati
8.2. Size:548K jiangsu
2sa1662.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SA1662 TRANSISTOR (PNP) 1. BASE FEATURES Complementary to KTC4374 2. COLLECTOR 1 2 MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3. EMITTER 3 Symbol Parameter Value Unit VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Ba
8.3. Size:204K jmnic
2sa1668.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1667 2SA1668 DESCRIPTION With TO-220F package Complement to type 2SC4381/4382 APPLICATIONS For TV vertical output ,audio output driver and general purpose applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220F) and symbol 3 Emitter Absolute maximum ratings (Ta=25 ) S
8.4. Size:204K jmnic
2sa1667.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1667 2SA1668 DESCRIPTION With TO-220F package Complement to type 2SC4381/4382 APPLICATIONS For TV vertical output ,audio output driver and general purpose applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220F) and symbol 3 Emitter Absolute maximum ratings (Ta=25 ) S
8.5. Size:27K sanken-ele
2sa1667 2sa1668.pdf
2SA1667/1668 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4381/4382) Application TV Vertical Output, Audio Output Driver and General Purpose Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) External Dimensions FM20 (TO220F) Ratings Ratings Symbol Unit Symbol Conditions Unit 0.2 2SA1667 2SA1668 2SA1667 2SA1668 0.2 4.2 10.1 c0.5 2.8
8.6. Size:63K transys
2sa1664.pdf
Transys Electronics L I M I T E D SOT-89 Plastic-Encapsulated Transistors SOT-89 2SA1664 TRANSISTOR (PNP) 1. BASE FEATURES Power dissipation 2. COLLECTOR 1 PCM 0.5 W (Tamb=25 ) 2 3. EMITTER 3 Collector current ICM -0.8 A Collector-base voltage V(BR)CBO -35 V Operating and storage junction temperature range TJ, Tstg -55 to +150 ELE
8.7. Size:183K htsemi
2sa1664.pdf
2SA1 664 TRANSISTOR(PNP) SOT-89-3L 1. BASE FEATURES 2. COLLECTOR Small Flat Package High Current Application 3. EMITTER High Transition Frequency MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -35 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -5 V IC Collector Current -0.8 A PC Collect
8.8. Size:262K htsemi
2sa1662.pdf
2SA1662 TRANSISTOR (PNP) FEATURES SOT-89 Complementary to KTC4374 1. BASE MAXIMUM RATINGS (TA=25 unless otherwise noted) 2. COLLECTOR Symbol Parameter Value Units 1 VCBO Collector-Base Voltage -80 V 2 3. EMITTER VCEO Collector-Emitter Voltage -80 V 3 VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.4 A PC Collector Power Dissipation 0.5 W TJ
8.9. Size:188K lge
2sa1662 sot-89.pdf
2SA1662 SOT-89 Transistor(PNP) 1. BASE SOT-89 4.6 2. COLLECTOR B 4.4 1 1.6 1.8 1.4 1.4 2 3. EMITTER 2.6 3 4.25 2.4 3.75 0.8 Features MIN 0.53 0.40 0.48 0.44 2x) Complementary to KTC4374 0.13 B 0.35 0.37 1.5 3.0 MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters) Symbol Parameter Value Units VCBO Collector-Base Voltage
8.11. Size:618K semtech
st2sa1666u.pdf
ST 2SA1666U PNP Silicon Epitaxial Planar Transistor for high current application Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Collector Base Voltage -VCBO 50 V Collector Emitter Voltage -VCEO 50 V Emitter Base Voltage -VEBO 5 V Collector Current -IC 2 A Base Current -IB 0.4 A 0.5 Total Power Dissipation Ptot W 1 1) Junction Temperature Tj 150 Stora
8.12. Size:1560K kexin
2sa1669.pdf
SMD Type Transistors PNP Transistors 2SA1669 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=-50mA Collector Emitter Voltage VCEO=-15V 1 2 +0.05 0.95+0.1 -0.1 0.1 -0.01 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -20 Colle
8.13. Size:314K kexin
2sa1664.pdf
SMD Type Transistors PNP Transistors 2SA1664 Features 1.70 0.1 Small Flat Package High Current Application High Transition Frequency 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -35 Collector - Emitter Voltage VCEO -30 V Emitter - Base Voltage VEBO -5 Col
8.14. Size:212K inchange semiconductor
2sa1668.pdf
isc Silicon PNP Power Transistor 2SA1668 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -200V(Min) (BR)CEO DC Current Gain- h = 60(Min)@ (V = -10V, I = -0.7A) FE CE C Complement to Type 2SC4382 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for TV vertical output ,audio output driver and general purpose a
8.15. Size:208K inchange semiconductor
2sa1667.pdf
isc Silicon PNP Power Transistor 2SA1667 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -150V(Min) (BR)CEO DC Current Gain- h = 60(Min)@ (V = -10V, I = -0.7A) FE CE C Complement to Type 2SC4381 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for TV vertical output ,audio output driver and general purpose a
Otros transistores... 2SA1654, 2SA1655, 2SA1656, 2SA1657, 2SA1658, 2SA1659, 2SA166, 2SA1660, 2N3904, 2SA1662, 2SA1663, 2SA1664, 2SA1666, 2SA1667, 2SA1668, 2SA1669, 2SA167
