2SA1661 Todos los transistores

 

2SA1661 Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SA1661
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.5 W
   Tensión colector-base (Vcb): 120 V
   Tensión colector-emisor (Vce): 120 V
   Corriente del colector DC máxima (Ic): 0.8 A
   Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 120 MHz
   Ganancia de corriente contínua (hfe): 160
   Paquete / Cubierta: SOT89
 

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2SA1661 datasheet

 ..1. Size:1499K  jiangsu
2sa1661.pdf pdf_icon

2SA1661

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SA1661 TRANSISTOR (PNP) 1. BASE FEATURES 2. COLLECTOR Small Flat Package High Current Application 3. EMITTER High Voltage High Transition Frequency MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -120 V

 ..2. Size:183K  htsemi
2sa1661.pdf pdf_icon

2SA1661

2SA1 661 SOT-89-3L TRANSISTOR(PNP) 1. BASE FEATURES 2. COLLECTOR Small Flat Package High Current Application 3. EMITTER High Voltage High Transition Frequency MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -5 V IC Collector Current -0

 0.1. Size:625K  semtech
st2sa1661u.pdf pdf_icon

2SA1661

ST 2SA1661U PNP Silicon Epitaxial Planar Transistor for high current application Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Collector Base Voltage -VCBO 120 V Collector Emitter Voltage -VCEO 120 V Emitter Base Voltage -VEBO 5 V Collector Current -IC 800 mA Base Current -IB 160 mA 0.5 Ptot W Total Power Dissipation 1 1) Junction Temperature Tj 150

 8.1. Size:129K  sanyo
2sa1669.pdf pdf_icon

2SA1661

Ordering number EN2972 PNP Epitaxial Planar Silicon Transistor 2SA1669 High-Frequency Amplifier Applications Features Package Dimensions High cutoff frequnecy fT=3.0GHz typ. unit mm High power gain MAG=11dB typ (f=0.9GHz) 2018A Small noise figure NF=2.0dB typ (f=0.9GHz) [2SA1669] C Collector B Base E Emitter SANYO CP Specifications Absolute Maximum Rati

Otros transistores... 2SA1654 , 2SA1655 , 2SA1656 , 2SA1657 , 2SA1658 , 2SA1659 , 2SA166 , 2SA1660 , C945 , 2SA1662 , 2SA1663 , 2SA1664 , 2SA1666 , 2SA1667 , 2SA1668 , 2SA1669 , 2SA167 .

History: 2SA1764 | 2SB804 | MJE13003I

 

 

 


 
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