2SA171 Datasheet. Equivalente

 0.1. Size:148K  sanyo
 2sa1710 2sc4490.pdf

Ordering number EN3097 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1710/2SC4490 High-Definition CRT Display Video Output Applications Features Package Dimensions High breakdown voltage (VCEO 300V). unit mm Excellent high frequency characteristic. 2064 Adoption of MBIT process. [2SA1710/2SC4490] E Emitter C Collector B Base ( ) 2SA1710 SANYO NMP Spec

 0.2. Size:141K  nec
 2sa1714.pdf

DATA SHEET SILICON TRANSISTOR 2SA1714 PNP SILICON EPITAXIAL POWER TRANSISTOR (DARLINGTON CONNECTION) FOR HIGH-SPEED SWITCHING The 2SA1714 is a high-speed darlington power transistor. This PACKAGE DRAWING (UNIT mm) transistor is ideal for high-precision control such as PWM control for pulse mortors or blushless mortor of OA and FA equipment. FEATURES High DC current amplifiers due

 0.3. Size:153K  jmnic
 2sa1718.pdf

JMnic Product Specification Silicon PNP Power Transistors 2SA1718 DESCRIPTION With TO-220F package High DC current gain. Low collector saturation voltage. DARLINGTON APPLICATIONS Ideal for motor drviers and solenoid drivers application PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220F) and symbol 3 Emitter Absolute maximum ratings

 0.4. Size:190K  inchange semiconductor
 2sa1718.pdf

isc Silicon PNP Power Transistor 2SA1718 DESCRIPTION Low Collector Saturation Voltage V = -0.5(V)(Max)@I = -2A CE(sat) C High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Vo