2SA176 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Ordering number:EN3182BPNP Epitaxial Planar Silicon Transistor2SA1766High hFE, Low-FrequencyGeneral-Purpose Amplifier ApplicationsFeatures Package Dimensions Adoption of FBET, MBIT processes.unit:mm High DC current gain (hFE=500 to 1200).2038 Large current capacity.[2SA1766] Low collector-to-emitter saturation voltage. High VEBO.E : EmitterC : Collec

Ordering number:ENN3582PNP/NPN Epitaxial Planar Silicon Transistors2SA1768/2SC4612High-Voltage Switching ApplicationsApplicaitons Package Dimensions Color TV sound output, converter, inverter. unit:mm2064AFeatures [2SA1768/2SC4612]2.5 Adoption of MBIT process.1.45 High breakdown voltage, large current capacity.6.9 1.0 Fast switching speed.0.60.9 0.51

Ordering number:EN3180BPNP Epitaxial Planar Silicon Transistor2SA1764High-Speed Switching ApplicationsFeatures Package Dimensions Fast switching speed.unit:mm Low collector saturation voltage.2018A High gain-bandwidth product.[2SA1764] Small collector capacitacne. Small-sized package permitting the 2SA1764-appliedsets to be made small and slim. Comp

Ordering number:EN3181APNP Epitaxial Planar Silicon Transistor2SA1765High-Speed Switching ApplicationsFeatures Package Dimensions Fast switching speed.unit:mm Low collector saturation voltage.2033 High gain-bandwidth product.[2SA1765] Small collector capacitance. Complementary pair with the 2SC4454.B : BaseC : CollectorE : EmitterSANYO : SPASpeci

Ordering number:EN3179APNP Epitaxial Planar Silicon Transistor2SA1763High-Speed Switching ApplicationsFeatures Package Dimensions Fast switching speed.unit:mm Low collector saturation voltage.2059 High gain-bandwidth product.[2SA1763] Small collector capacitance. Very small-sized package permitting the 2SA1763-applied sets to be made small and slim.

Ordering number : EN3582A2SA1768Bipolar Transistorhttp://onsemi.com ( )180V, 160A, Low VCE sat PNP Single NMPApplicaitons Color TV sound output, converter, inverterFeatures Adoption of MBIT process High breakdown voltage, large current capacity Fast switching speedSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings

Transistor2SA1767Silicon PNP epitaxial planer typeFor general amplificationUnit: mmComplementary to 2SC1473A5.0 0.2 4.0 0.2FeaturesHigh collector to emitter voltage VCEO.Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings UnitCollector to base voltage VCBO 300 V+0.2 +0.20.45 0.1 0.45 0.1Collector to emitter voltage VCEO 300 V1.27 1.27Emitt

Transistor2SA1762Silicon PNP epitaxial planer typeFor low-frequency driver amplificationUnit: mmComplementary to 2SC46066.9 0.1 2.5 0.11.51.5 R0.9 1.0Features R0.9High collector to emitter voltage VCEO.Optimum for the driver stage of a low-frequency and 25 to 30Woutput amplifier.0.85Absolute Maximum Ratings (Ta=25C) 0.55 0.1 0.45 0.05Parameter Symbol

Transistor2SA1762Silicon PNP epitaxial planer typeFor low-frequency driver amplificationUnit: mmComplementary to 2SC46066.9 0.1 2.5 0.11.51.5 R0.9 1.0Features R0.9High collector to emitter voltage VCEO.Optimum for the driver stage of a low-frequency and 25 to 30Woutput amplifier.0.85Absolute Maximum Ratings (Ta=25C) 0.55 0.1 0.45 0.05Parameter Symbol

Transistor2SA1767Silicon PNP epitaxial planer typeFor general amplificationUnit: mmComplementary to 2SC1473A5.0 0.2 4.0 0.2FeaturesHigh collector to emitter voltage VCEO.Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings UnitCollector to base voltage VCBO 300 V+0.2 +0.20.45 0.1 0.45 0.1Collector to emitter voltage VCEO 300 V1.27 1.27Emitt

SMD Type TransistorsPNP Transistors2SA17661.70 0.1 Features Adoption of FBET, MBIT processes. High DC current gain (hFE=500 to 1200). Large current capacity.0.42 0.10.46 0.1 Low collector-to-emitter saturation voltage. High VEBO.1.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base

SMD Type TransistorsPNP Transistors2SA1764SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features Collector Current Capability IC=-200mA1 2 Collector Emitter Voltage VCEO=-15V+0.1+0.050.95 -0.1 0.1 -0.01 Complementary to 2SC4453 +0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collect