All Transistors. 2SA176 Datasheet

 

2SA176 Datasheet and Replacement


   Type Designator: 2SA176
   Material of Transistor: Ge
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.055 W
   Maximum Collector-Base Voltage |Vcb|: 18 V
   Maximum Collector-Emitter Voltage |Vce|: 12 V
   Maximum Collector Current |Ic max|: 0.005 A
   Max. Operating Junction Temperature (Tj): 75 °C
   Transition Frequency (ft): 35 MHz
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: TO44
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2SA176 Datasheet (PDF)

 0.1. Size:189K  toshiba
2sa1761.pdf pdf_icon

2SA176

 0.2. Size:87K  sanyo
2sa1766.pdf pdf_icon

2SA176

Ordering number:EN3182BPNP Epitaxial Planar Silicon Transistor2SA1766High hFE, Low-FrequencyGeneral-Purpose Amplifier ApplicationsFeatures Package Dimensions Adoption of FBET, MBIT processes.unit:mm High DC current gain (hFE=500 to 1200).2038 Large current capacity.[2SA1766] Low collector-to-emitter saturation voltage. High VEBO.E : EmitterC : Collec

 0.3. Size:106K  sanyo
2sa1768.pdf pdf_icon

2SA176

Ordering number:ENN3582PNP/NPN Epitaxial Planar Silicon Transistors2SA1768/2SC4612High-Voltage Switching ApplicationsApplicaitons Package Dimensions Color TV sound output, converter, inverter. unit:mm2064AFeatures [2SA1768/2SC4612]2.5 Adoption of MBIT process.1.45 High breakdown voltage, large current capacity.6.9 1.0 Fast switching speed.0.60.9 0.51

 0.4. Size:131K  sanyo
2sa1769 2sc4613.pdf pdf_icon

2SA176

Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N5401 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .

History: 2N1305 | MA202 | 2N29

Keywords - 2SA176 transistor datasheet

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