2SA1811 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SA1811

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.8 W

Tensión colector-base (Vcb): 35 V

Tensión colector-emisor (Vce): 30 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 0.5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 200 MHz

Capacitancia de salida (Cc): 9 pF

Ganancia de corriente contínua (hfe): 100

Empaquetado / Estuche: TO92

Búsqueda de reemplazo de transistor bipolar 2SA1811

2SA1811 Datasheet (PDF)

1.1. 2sa1811.pdf Size:173K _toshiba

4.1. 2sa1815.pdf Size:70K _sanyo

Ordering number:EN4625 PNP Epitaxial Planar Silicon Transistor 2SA1815 FM, RF, MIX, IF Amplifier, High-Frequency General-Purpose Amplifier Applications Features Package Dimensions � High power gain : PG=25dB (f=100MHz). unit:mm � High cutoff frequency ; fT=750MHz typ. 2018A � Low collector-to-emitter saturation voltage. [2SA1815] � Complementary pair with the 2SC4432. C : Collecto

4.2. 2sa1814.pdf Size:84K _sanyo

Ordering number:EN3973 PNP Epitaxial Planar Silicon Transistor 2SA1814 Low-Frequency General-Purpose Amplifier Driver, Muting Circuit Applications Features Package Dimensions � Very small-sized package permitting 2SA1814- unit:mm applied sets to be made smaller and slimmer. 2018B � Adoption of FBET process. [2SA1814] � High DC current gain (hFE=500 to 1200). � Low collector-to-emi

4.3. 2sa1813.pdf Size:83K _sanyo

Ordering number:EN3972 PNP Epitaxial Planar Silicon Transistor 2SA1813 Low-Frequency General-Purpose Amplifier Driver, Muting Circuit Applications Features Package Dimensions � Very small-sized package permitting 2SA1813- unit:mm applied sets to be made smaller and slimmer. 2059A � Adoption of FBET process. [2SA1813] � High DC current gain (hFE=500 to 1200). � Low collector-to-emi

4.4. 2sa1812.pdf Size:27K _rohm

Transistors 2SA1812 / 2SA1727 / 2SA1776 (96-609-A313) 320

4.5. 2sa1812 2sa1727 2sa1776.pdf Size:250K _rohm

2SA1812 / 2SA1727 / 2SA1776 Transistors High-voltage Switching Transistor ( 400V, 0.5A) 2SA1812 / 2SA1727 / 2SA1776 Features 1) High breakdown voltage, BVCEO= 400V. 2) Low saturation voltage, typically VCE (sat) = 0.3V at IC / IB = 100mA / 10mA. 3) High switching speed, typically tf : 1 s at IC = 100mA. 4) Wide SOA (safe operating area). Absolute maximum ratings (Ta=25�C) Parameter Sy

4.6. 2sa1816.pdf Size:21K _panasonic

Transistor 2SA1816(Tentative) Silicon PNP epitaxial planer type For low-frequency high breakdown voltage amplification Unit: mm 4.0� 0.2 Features High collector to emitter voltage VCEO. Absolute Maximum Ratings (Ta=25?C) marking Parameter Symbol Ratings Unit 1 2 3 Collector to base voltage VCBO �150 V Collector to emitter voltage VCEO �150 V Emitter to base voltage VEBO �5 V 1.27 1.

4.7. 2sa1816 e.pdf Size:25K _panasonic

4.8. 2sa1810.pdf Size:32K _hitachi

2SA1810 Silicon PNP Epitaxial Application High frequency amplifier Features � Excellent high frequency characteristics fT = 300 MHz typ � High voltage and low output capacitance VCEO = �200 V, Cob = 5.0 pF typ � Suitable for wide band video amplifier Outline TO-126 MOD 1. Emitter 2. Collector 3. Base 1 2 3 2SA1810 Absolute Maximum Ratings (Ta = 25�C) Item Symbol Ratings Unit

4.9. 2sa1815.pdf Size:903K _kexin

SMD Type Transistors PNP Transistors 2SA1815 SOT-23 Unit: mm 2.9+0.1 -0.1 +0.1 0.4 -0.1 ■ Features 3 ● High power gain : PG=25dB (f=100MHz). ● High cutoff frequency ; fT=750MHz typ. ● Low collector-to-emitter saturation voltage. 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 ● Complementary pair with the 2SC4432. 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector ■ Absolute Max

4.10. 2sa1812.pdf Size:1133K _kexin

SMD Type Transistors PNP Transistors 2SA1812 1.70 0.1 ■ Features ● High breakdown voltage, BVCEO=-400V. ● High switching speed, typically tf :1us at IC =-100mA. 0.42 0.1 0.46 0.1 ●High-voltage Switching Transistor 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO -400 Collector - Emitter V

4.11. 2sa1813.pdf Size:1036K _kexin

SMD Type Transistors PNP Transistors 2SA1813 ■ Features ● High DC current gain (hFE=500 to 1200). ● Low collector-to-emitter saturation voltage ● High VEBO 1 Base 2 Emitter 3 Colletor ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO -30 Collector - Emitter Voltage VCEO -25 V Emitter - Base Voltage VEBO -15 Collector

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

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