2SA1815 Todos los transistores

 

2SA1815 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SA1815

Código: JS3_JS4_JS5

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.25 W

Tensión colector-base (Vcb): 15 V

Tensión colector-emisor (Vce): 12 V

Tensión emisor-base (Veb): 3 V

Corriente del colector DC máxima (Ic): 0.05 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (ft): 700 MHz

Capacitancia de salida (Cc): 1.6 pF

Ganancia de corriente contínua (hfe): 60

Paquete / Cubierta: SOT323

Búsqueda de reemplazo de transistor bipolar 2SA1815

 

2SA1815 Datasheet (PDF)

 ..1. Size:70K  sanyo
2sa1815.pdf

2SA1815
2SA1815

Ordering number:EN4625PNP Epitaxial Planar Silicon Transistor2SA1815FM, RF, MIX, IF Amplifier, High-FrequencyGeneral-Purpose Amplifier ApplicationsFeatures Package Dimensions High power gain : PG=25dB (f=100MHz).unit:mm High cutoff frequency ; fT=750MHz typ.2018A Low collector-to-emitter saturation voltage.[2SA1815] Complementary pair with the 2SC4432.C : C

 ..2. Size:903K  kexin
2sa1815.pdf

2SA1815
2SA1815

SMD Type TransistorsPNP Transistors2SA1815SOT-23Unit: mm2.9+0.1-0.1+0.10.4 -0.1 Features 3 High power gain : PG=25dB (f=100MHz). High cutoff frequency ; fT=750MHz typ. Low collector-to-emitter saturation voltage. 1 2+0.1+0.050.95 -0.1 0.1 -0.01 Complementary pair with the 2SC4432.1.9+0.1-0.11.Base2.Emitter3.collector Absolute Max

 8.1. Size:173K  toshiba
2sa1811.pdf

2SA1815
2SA1815

 8.2. Size:84K  sanyo
2sa1814.pdf

2SA1815
2SA1815

Ordering number:EN3973PNP Epitaxial Planar Silicon Transistor2SA1814Low-Frequency General-Purpose AmplifierDriver, Muting Circuit ApplicationsFeatures Package Dimensions Very small-sized package permitting 2SA1814-unit:mmapplied sets to be made smaller and slimmer.2018B Adoption of FBET process.[2SA1814] High DC current gain (hFE=500 to 1200). Low collector

 8.3. Size:83K  sanyo
2sa1813.pdf

2SA1815
2SA1815

Ordering number:EN3972PNP Epitaxial Planar Silicon Transistor2SA1813Low-Frequency General-Purpose AmplifierDriver, Muting Circuit ApplicationsFeatures Package Dimensions Very small-sized package permitting 2SA1813-unit:mmapplied sets to be made smaller and slimmer.2059A Adoption of FBET process.[2SA1813] High DC current gain (hFE=500 to 1200). Low collector

 8.4. Size:250K  rohm
2sa1812 2sa1727 2sa1776.pdf

2SA1815
2SA1815

2SA1812 / 2SA1727 / 2SA1776TransistorsHigh-voltage Switching Transistor( 400V, 0.5A)2SA1812 / 2SA1727 / 2SA1776 Features1) High breakdown voltage, BVCEO= 400V.2) Low saturation voltage, typically VCE (sat) = 0.3V at IC / IB = 100mA / 10mA.3) High switching speed, typically tf : 1 s at IC = 100mA.4) Wide SOA (safe operating area). Absolute maximum ratings (Ta=25C)Paramete

 8.5. Size:27K  rohm
2sa1812.pdf

2SA1815

Transistors 2SA1812 / 2SA1727 / 2SA1776(96-609-A313)320

 8.6. Size:25K  panasonic
2sa1816 e.pdf

2SA1815

Transistor2SA1816(Tentative)Silicon PNP epitaxial planer typeFor low-frequency high breakdown voltage amplificationUnit: mm4.0 0.2FeaturesHigh collector to emitter voltage VCEO.Absolute Maximum Ratings (Ta=25C)markingParameter Symbol Ratings Unit1 2 3Collector to base voltage VCBO 150 VCollector to emitter voltage VCEO 150 VEmitter to base voltage VEBO 5

 8.7. Size:21K  panasonic
2sa1816.pdf

2SA1815

Transistor2SA1816(Tentative)Silicon PNP epitaxial planer typeFor low-frequency high breakdown voltage amplificationUnit: mm4.0 0.2FeaturesHigh collector to emitter voltage VCEO.Absolute Maximum Ratings (Ta=25C)markingParameter Symbol Ratings Unit1 2 3Collector to base voltage VCBO 150 VCollector to emitter voltage VCEO 150 VEmitter to base voltage VEBO 5

 8.8. Size:32K  hitachi
2sa1810.pdf

2SA1815
2SA1815

2SA1810Silicon PNP EpitaxialApplicationHigh frequency amplifierFeatures Excellent high frequency characteristicsfT = 300 MHz typ High voltage and low output capacitanceVCEO = 200 V, Cob = 5.0 pF typ Suitable for wide band video amplifierOutlineTO-126 MOD1. Emitter2. Collector3. Base1232SA1810Absolute Maximum Ratings (Ta = 25C)Item Symbol Ra

 8.9. Size:1133K  kexin
2sa1812.pdf

2SA1815
2SA1815

SMD Type TransistorsPNP Transistors2SA18121.70 0.1 Features High breakdown voltage, BVCEO=-400V. High switching speed, typically tf :1us at IC =-100mA.0.42 0.10.46 0.1 High-voltage Switching Transistor1.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -400 Collector - Emitter V

 8.10. Size:1036K  kexin
2sa1813.pdf

2SA1815
2SA1815

SMD Type TransistorsPNP Transistors2SA1813 Features High DC current gain (hFE=500 to 1200). Low collector-to-emitter saturation voltage High VEBO1 Base2 Emitter3 Colletor Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -30 Collector - Emitter Voltage VCEO -25 V Emitter - Base Voltage VEBO -15 Collector

Otros transistores... 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , BC327 , 2SA1815-3 , 2SA1815-4 , 2SA1815-5 , 2SA182 , 2SA1822 , 2SA183 , 2SA1832 , 2SA1837 .

 

 
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