2SA1860 Datasheet. Equivalente

 ..1. Size:193K  jmnic
 2sa1860.pdf

JMnic Product Specification Silicon PNP Power Transistors 2SA1860 DESCRIPTION With TO-3PML package Complement to type 2SC4886 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION 1 Emitter 2 Collector Fig.1 simplified outline (TO-3PML) and symbol 3 Base Absolute maximum ratings(Tc=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base volta

 ..2. Size:29K  sanken-ele
 2sa1860.pdf

 ..3. Size:222K  inchange semiconductor
 2sa1860.pdf

isc Silicon PNP Power Transistor 2SA1860 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -150V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SC4886 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE

 8.1. Size:173K  toshiba
 2sa1869.pdf

 8.2. Size:55K  sanyo
 2sa1865.pdf

Ordering number EN4720 PNP Epitaxial Planar Silicon Transistor 2SA1865 Muting Circuits, Driver Applications Features Package Dimensions On-chip bias resistors (R1=10k , R2=10k ). unit mm Very small-sized package making 2SA1865-applied 2106A sets to small and slim. [2SA1865] Small ON resistance. High gain-bandwidth product fT. 1 Base 2 Emitter 3 Collec

 8.3. Size:31K  sanyo
 2sa1864.pdf

Ordering number EN4719 PNP Epitaxial Planar Silicon Transistor 2SA1864 Muting Circuits, Driver Applications Features Package Dimensions On-chip bias resistors (R1=4.7k , R2=4.7k ). unit mm Very small-sized package making 2SA1864-applied 2106A sets small and slim. [2SA1864] High gain-bandwidth product fT. 1 Base 2 Emitter 3 Collector SANYO SMCP Specificati

 8.4. Size:55K  sanyo
 2sa1866.pdf

Ordering number 4721 PNP Epitaxial Planar Silicon Transistor 2SA1866 Muting Circuits, Driver Applications Features Package Dimensions On-chip bias resistors (R1=47k , R2=47k ). unit mm Very small-sized package making 2SA1866-applied 2106A sets small and slim. [2SA1866] Small ON resistance. High gain-bandwidth product fT. 1 Base 2 Emitter 3 Collector S

 8.5. Size:91K  rohm
 2sa1862.pdf

2SA1862 Transistors High-voltage Switching Transistor (-400V, -2A) 2SA1862 External dimensions (Unit mm) Features 1) High breakdown voltage. (BVCEO = -400V) 6.5 CPT3 5.1 2.3 2) Low saturation voltage. 0.5 (Max. VCE (sat) = -0.5V at IC / IB = -500mA / -100mA) 3) High switching speed, typically tf = 0.4 s at IC = -1A. 4) Wide SOA (safe operating area). 0.75 Ab

 8.6. Size:56K  rohm
 2sa1807 2sa1862.pdf

2SA1807 Transistors Transistors 2SA1862 (96-102-A331) (96-109-A343) 307 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference onl

 8.7. Size:204K  jmnic
 2sa1869.pdf

JMnic Product Specification Silicon PNP Power Transistors 2SA1869 DESCRIPTION With TO-220F package Complement to type 2SC4935 APPLICATIONS Power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -50 V VCEO Collector-emitter

 8.8. Size:214K  inchange semiconductor
 2sa1869.pdf

isc Silicon PNP Power Transistor 2SA1869 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -50V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SC4935 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Co