JMnic Product Specification Silicon PNP Power Transistors 2SA1860 DESCRIPTION With TO-3PML package Complement to type 2SC4886 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION1 Emitter 2 CollectorFig.1 simplified outline (TO-3PML) and symbol 3 BaseAbsolute maximum ratings(Tc=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base volta

LAPT 2SA1860Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4886)Application : Audio and General PurposeExternal Dimensions FM100(TO3PF)(Ta=25C) Absolute maximum ratings (Ta=25C) Electrical CharacteristicsSymbol Ratings Unit Symbol Conditions Ratings Unit0.20.2 5.515.60.23.45VCBO 150 V ICBO VCB=150V 100max AVCEO 150 V IEBO VEB=

isc Silicon PNP Power Transistor 2SA1860DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -150V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC4886Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE

Ordering number:EN4720 PNP Epitaxial Planar Silicon Transistor2SA1865Muting Circuits, Driver ApplicationsFeatures Package Dimensions On-chip bias resistors (R1=10k , R2=10k ).unit:mm Very small-sized package making 2SA1865-applied2106Asets to small and slim.[2SA1865] Small ON resistance. High gain-bandwidth product fT.1 : Base2 : Emitter3 : Collec

Ordering number:EN4719PNP Epitaxial Planar Silicon Transistor2SA1864Muting Circuits, Driver ApplicationsFeatures Package Dimensions On-chip bias resistors (R1=4.7k, R2=4.7k).unit:mm Very small-sized package making 2SA1864-applied2106Asets small and slim.[2SA1864] High gain-bandwidth product fT.1 : Base2 : Emitter3 : CollectorSANYO : SMCPSpecificati

Ordering number:4721PNP Epitaxial Planar Silicon Transistor2SA1866Muting Circuits, Driver ApplicationsFeatures Package Dimensions On-chip bias resistors (R1=47k , R2=47k ).unit:mm Very small-sized package making 2SA1866-applied2106Asets small and slim.[2SA1866] Small ON resistance. High gain-bandwidth product fT.1 : Base2 : Emitter3 : CollectorS

2SA1862 Transistors High-voltage Switching Transistor (-400V, -2A) 2SA1862 External dimensions (Unit : mm) Features 1) High breakdown voltage. (BVCEO = -400V) 6.5CPT35.12.32) Low saturation voltage. 0.5 (Max. VCE (sat) = -0.5V at IC / IB = -500mA / -100mA) 3) High switching speed, typically tf = 0.4s at IC = -1A. 4) Wide SOA (safe operating area). 0.75 Ab

2SA1807TransistorsTransistors2SA1862(96-102-A331)(96-109-A343)307Appendix NotesNo technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD.The contents described herein are subject to change without notice. The specifications for theproduct described in this document are for reference onl

JMnic Product Specification Silicon PNP Power Transistors 2SA1869 DESCRIPTION With TO-220F package Complement to type 2SC4935 APPLICATIONS Power amplifier applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterAbsolute maximum ratings (Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base voltage Open emitter -50 V VCEO Collector-emitter

isc Silicon PNP Power Transistor 2SA1869DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -50V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC4935Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Co