2SA190 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

2SA1900 Transistors Medium power transistor (-50V, -1A) 2SA1900 Dimensions (Unit : mm) Features 1) Low saturation voltage, typically VCE(sat) = -0.15V at IC / MPT3IB = -500mA / -50mA 2) PC=2W (on 40400.7mm ceramic board) 3) Complements the 2SC5053 (1)Base(2)Collector(3)Emitter Absolute maximum ratings (Ta=25C) Parameter Symbol Limits UnitVCBO -60 VCol

2SA1900TransistorsTransistors2SC5053(96-115-B352)(96-196-D352)297Appendix NotesNo technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD.The contents described herein are subject to change without notice. The specifications for theproduct described in this document are for reference onl

JMnic Product Specification Silicon PNP Power Transistors 2SA1908 DESCRIPTION With TO-3PML package Complement to type 2SC5100 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION1 Emitter 2 CollectorFig.1 simplified outline (TO-3PML) and symbol 3 BaseAbsolute maximum ratings(Tc=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base volta

JMnic Product Specification Silicon PNP Power Transistors 2SA1909 DESCRIPTION With TO-3PML package Complement to type 2SC5101 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION1 Emitter 2 CollectorFig.1 simplified outline (TO-3PML) and symbol 3 BaseAbsolute maximum ratings(Tc=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base volta

JMnic Product Specification Silicon PNP Power Transistors 2SA1907 DESCRIPTION With TO-3PML package Complement to type 2SC5099 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION1 Emitter 2 CollectorFig.1 simplified outline (TO-3PML) and symbol 3 BaseAbsolute maximum ratings(Tc=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base volta

2SA1908Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC5100)Application : Audio and General PurposeExternal Dimensions FM100(TO3PF) Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)Symbol Ratings Unit Symbol Conditions Ratings Unit0.20.2 5.515.60.23.45VCBO 120 V ICBO VCB=120V 10max AIEBOVCEO 120 V VEB=6V

2SA1909Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC5101)Application : Audio and General PurposeExternal Dimensions FM100(TO3PF) Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)Symbol Ratings Unit Symbol Conditions Ratings Unit0.20.2 5.515.60.23.45VCBO 140 V ICBO VCB=140V 10max AVCEO 140 V IEBO VEB=6V

2SA1907Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC5099)Application : Audio and General PurposeExternal Dimensions FM100(TO3PF) Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)Symbol Ratings Unit Symbol Conditions Ratings Unit0.20.2 5.515.60.23.45VCBO 80 V ICBO VCB=80V 10max AVCEO 80 V IEBO VEB=6V 10m

ST 2SA1900U PNP Silicon Epitaxial Planar Transistor Medium power transistor Absolute Maximum Ratings (Ta = 25) Parameter Symbol Value UnitCollector Base Voltage -VCBO 60 VCollector Emitter Voltage -VCEO 50 VEmitter Base Voltage -VEBO 5 VCollector Current -IC 1 ACollector Current (Pw = 20 ms) -ICP 2 A0.5 PC W Collector Power Dissipation2 1) Junction Temperature Tj

SMD Type TransistorsPNP Transistors2SA1900SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=-1A Collector Emitter Voltage VCEO=-50V Complements the 2SC50530.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -60 Collector - Emitter Voltage VCEO -

isc Silicon PNP Power Transistor 2SA1908DESCRIPTIONCollector-Emitter Breakdown Voltage-V = -120V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC5100Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UN

isc Silicon PNP Power Transistor 2SA1909DESCRIPTIONCollector-Emitter Breakdown Voltage-V = -140V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC5101Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UN

isc Silicon PNP Power Transistor 2SA1907DESCRIPTIONCollector-Emitter Breakdown Voltage-V = -80V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC5099Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNI