2SA190 datasheet, аналоги, основные параметры
Наименование производителя: 2SA190 📄📄
Тип материала: Ge
Полярность: PNP
Предельные значения
Максимальная рассеиваемая мощность (Pc): 0.08 W
Макcимально допустимое напряжение коллектор-база (Ucb): 20 V
Макcимальный постоянный ток коллектора (Ic): 0.015 A
Предельная температура PN-перехода (Tj): 80 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 15 MHz
Статический коэффициент передачи тока (hFE): 30
Корпус транзистора: TO44
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Аналоги (замена) для 2SA190
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2SA190 даташит
0.3. Size:72K rohm
2sa1900.pdf 
2SA1900 Transistors Medium power transistor (-50V, -1A) 2SA1900 Dimensions (Unit mm) Features 1) Low saturation voltage, typically VCE(sat) = -0.15V at IC / MPT3 IB = -500mA / -50mA 2) PC=2W (on 40 40 0.7mm ceramic board) 3) Complements the 2SC5053 (1)Base (2)Collector (3)Emitter Absolute maximum ratings (Ta=25 C) Parameter Symbol Limits Unit VCBO -60 V Col
0.4. Size:47K rohm
2sa1900 2sc5053.pdf 
2SA1900 Transistors Transistors 2SC5053 (96-115-B352) (96-196-D352) 297 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference onl
0.5. Size:191K jmnic
2sa1908.pdf 
JMnic Product Specification Silicon PNP Power Transistors 2SA1908 DESCRIPTION With TO-3PML package Complement to type 2SC5100 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION 1 Emitter 2 Collector Fig.1 simplified outline (TO-3PML) and symbol 3 Base Absolute maximum ratings(Tc=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base volta
0.6. Size:191K jmnic
2sa1909.pdf 
JMnic Product Specification Silicon PNP Power Transistors 2SA1909 DESCRIPTION With TO-3PML package Complement to type 2SC5101 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION 1 Emitter 2 Collector Fig.1 simplified outline (TO-3PML) and symbol 3 Base Absolute maximum ratings(Tc=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base volta
0.7. Size:192K jmnic
2sa1907.pdf 
JMnic Product Specification Silicon PNP Power Transistors 2SA1907 DESCRIPTION With TO-3PML package Complement to type 2SC5099 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION 1 Emitter 2 Collector Fig.1 simplified outline (TO-3PML) and symbol 3 Base Absolute maximum ratings(Tc=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base volta
0.9. Size:28K sanken-ele
2sa1909.pdf 
2SA1909 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC5101) Application Audio and General Purpose External Dimensions FM100(TO3PF) Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) Symbol Ratings Unit Symbol Conditions Ratings Unit 0.2 0.2 5.5 15.6 0.2 3.45 VCBO 140 V ICBO VCB= 140V 10max A VCEO 140 V IEBO VEB= 6V
0.10. Size:28K sanken-ele
2sa1907.pdf 
2SA1907 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC5099) Application Audio and General Purpose External Dimensions FM100(TO3PF) Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) Symbol Ratings Unit Symbol Conditions Ratings Unit 0.2 0.2 5.5 15.6 0.2 3.45 VCBO 80 V ICBO VCB= 80V 10max A VCEO 80 V IEBO VEB= 6V 10m
0.11. Size:558K semtech
st2sa1900u.pdf 
ST 2SA1900U PNP Silicon Epitaxial Planar Transistor Medium power transistor Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Collector Base Voltage -VCBO 60 V Collector Emitter Voltage -VCEO 50 V Emitter Base Voltage -VEBO 5 V Collector Current -IC 1 A Collector Current (Pw = 20 ms) -ICP 2 A 0.5 PC W Collector Power Dissipation 2 1) Junction Temperature Tj
0.12. Size:874K kexin
2sa1900.pdf 
SMD Type Transistors PNP Transistors 2SA1900 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=-1A Collector Emitter Voltage VCEO=-50V Complements the 2SC5053 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -60 Collector - Emitter Voltage VCEO -
0.13. Size:222K inchange semiconductor
2sa1908.pdf 
isc Silicon PNP Power Transistor 2SA1908 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -120V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SC5100 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UN
0.14. Size:222K inchange semiconductor
2sa1909.pdf 
isc Silicon PNP Power Transistor 2SA1909 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -140V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SC5101 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UN
0.15. Size:224K inchange semiconductor
2sa1907.pdf 
isc Silicon PNP Power Transistor 2SA1907 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -80V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SC5099 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNI
Другие транзисторы: 2SA1860, 2SA188, 2SA1889, 2SA1889B, 2SA1889C, 2SA189, 2SA18H, 2SA19, 2SC2240, 2SA1907, 2SA1908, 2SA1909, 2SA191, 2SA192, 2SA193, 2SA194, 2SA195
