2SA214 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SA214  📄📄 

Material: Ge

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.015 W

Tensión colector-base (Vcb): 15 V

Corriente del colector DC máxima (Ic): 0.002 A

Temperatura operativa máxima (Tj): 85 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 60 MHz

Capacitancia de salida (Cc): 2 pF

Ganancia de corriente contínua (hFE): 25

Encapsulados: TO1

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2SA214 datasheet

 0.1. Size:154K  toshiba
 2sa2142.pdf pdf_icon

2SA214

2SA2142 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA2142 High-Voltage Switching Applications Unit mm High breakdown voltage VCEO = -600 V Absolute Maximum Ratings (Ta = 25 C) Characteristic Symbol Rating Unit Collector-base voltage VCBO -600 V Collector-emitter voltage VCEO -600 V Emitter-base voltage VEBO -7 V DC IC -0.5 Collector current A Pulse ICP -1

 0.2. Size:79K  panasonic
 2sa2140 2sc5993.pdf pdf_icon

2SA214

Product News Delivering high breakdown voltage plus high frequency characteristics. High-fT Transistors 2SA2140/2SC5993 Overview 2SA2140/2SC5993 high-fT transistors deliver a typical fT Unit mm value of 100MHz or higher at VCEO of 180V while featuring high-speed switching and low-saturation voltage characteristics. Making use of these transistors assists the production of power s

 0.3. Size:214K  inchange semiconductor
 2sa2140.pdf pdf_icon

2SA214

isc Silicon PNP Power Transistor 2SA2140 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -180V(Min) (BR)CEO Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplification and for TV VM circuit. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Vol

MOSTRAR MÁS

Otros transistores... 2SA209H, 2SA21, 2SA210, 2SA210H, 2SA211, 2SA212, 2SA212H, 2SA213, TIP41, 2SA215, 2SA216, 2SA217, 2SA217H, 2SA218, 2SA219, 2SA22, 2SA220