2SA214 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SA214
Material of Transistor: Ge
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.015 W
Maximum Collector-Base Voltage |Vcb|: 15 V
Maximum Collector Current |Ic max|: 0.002 A
Max. Operating Junction Temperature (Tj): 85 °C
Transition Frequency (ft): 60 MHz
Collector Capacitance (Cc): 2 pF
Forward Current Transfer Ratio (hFE), MIN: 25
Noise Figure, dB: -
Package: TO1
2SA214 Transistor Equivalent Substitute - Cross-Reference Search
2SA214 Datasheet (PDF)
2sa2142.pdf
2SA2142 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA2142 High-Voltage Switching Applications Unit: mm High breakdown voltage: VCEO = -600 V Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating UnitCollector-base voltage VCBO -600 VCollector-emitter voltage VCEO -600 VEmitter-base voltage VEBO -7 VDC IC -0.5 Collector current A Pulse ICP -1
2sa2140 2sc5993.pdf
Product NewsDelivering high breakdown voltage plus high frequency characteristics.High-fT Transistors 2SA2140/2SC5993 Overview2SA2140/2SC5993 high-fT transistors deliver a typical fTUnit : mmvalue of 100MHz or higher at VCEO of 180V while featuring high-speed switching and low-saturation voltage characteristics. Making use of these transistors assists the production of power s
2sa2140.pdf
isc Silicon PNP Power Transistor 2SA2140DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -180V(Min)(BR)CEOGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplification and for TV VM circuit.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Vol
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
