2SA214 Datasheet and Replacement
Type Designator: 2SA214
Material of Transistor: Ge
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.015 W
Maximum Collector-Base Voltage |Vcb|: 15 V
Maximum Collector Current |Ic max|: 0.002 A
Max. Operating Junction Temperature (Tj): 85 °C
Transition Frequency (ft): 60 MHz
Collector Capacitance (Cc): 2 pF
Forward Current Transfer Ratio (hFE), MIN: 25
Noise Figure, dB: -
Package: TO1
2SA214 Substitution
2SA214 Datasheet (PDF)
2sa2142.pdf

2SA2142 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA2142 High-Voltage Switching Applications Unit: mm High breakdown voltage: VCEO = -600 V Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating UnitCollector-base voltage VCBO -600 VCollector-emitter voltage VCEO -600 VEmitter-base voltage VEBO -7 VDC IC -0.5 Collector current A Pulse ICP -1
2sa2140 2sc5993.pdf

Product NewsDelivering high breakdown voltage plus high frequency characteristics.High-fT Transistors 2SA2140/2SC5993 Overview2SA2140/2SC5993 high-fT transistors deliver a typical fTUnit : mmvalue of 100MHz or higher at VCEO of 180V while featuring high-speed switching and low-saturation voltage characteristics. Making use of these transistors assists the production of power s
2sa2140.pdf

isc Silicon PNP Power Transistor 2SA2140DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -180V(Min)(BR)CEOGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplification and for TV VM circuit.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Vol
Datasheet: 2SA209H , 2SA21 , 2SA210 , 2SA210H , 2SA211 , 2SA212 , 2SA212H , 2SA213 , A1015 , 2SA215 , 2SA216 , 2SA217 , 2SA217H , 2SA218 , 2SA219 , 2SA22 , 2SA220 .
History: RN2307
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2SA214 cross reference
2SA214 equivalent finder
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History: RN2307



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