2SA216
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SA216
Material: Ge
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.015
W
Tensión colector-base (Vcb): 15
V
Corriente del colector DC máxima (Ic): 0.002
A
Temperatura operativa máxima (Tj): 85
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 50
MHz
Capacitancia de salida (Cc): 2
pF
Ganancia de corriente contínua (hfe): 40
Paquete / Cubierta:
TO1
Búsqueda de reemplazo de transistor bipolar 2SA216
2SA216
Datasheet (PDF)
0.1. Size:384K sanyo
2sa2169-e 2sa2169-tl-e.pdf 
2SA2169/2SC6017Ordering number : EN8275ASANYO SemiconductorsDATA SHEETPNP/NPN Epitaxial Planar Silicon Transistor2SA2169/2SC6017 High-Current SwitchingApplicationsApplications Relay drivers, lamp drivers, motor driversFeatures Adoption of MBIT processes Large current capacitance Low collector-to-emitter saturation voltage High-speed switching( ): 2SA
0.2. Size:61K sanyo
2sa2169 2sc6017.pdf
Ordering number : ENN82752SA2169 / 2SC6017PNP / NPN Epitaxial Planar Silicon TransistorsHigh-Current Switching2SA2169 / 2SC6017ApplicationsApplications Relay drivers, lamp drivers, motor drivers.Features Adoption of MBIT process. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching.Specifications ( ) : 2SA2169Abs
0.3. Size:430K onsemi
2sa2169 2sc6017.pdf
Ordering number : EN8275A2SA2169/2SC6017Bipolar Transistorhttp://onsemi.com(-)50V, (-)10A, Low VCE(sat), (PNP)NPN Single TP/TP-FAApplications Relay drivers, lamp drivers, motor driversFeatures Adoption of MBIT processes Large current capacity Low collector-to-emitter saturation voltage High-speed switching( ): 2SA2169Specifications Absolute Maximum R
0.4. Size:421K panasonic
2sa2164.pdf
Transistors 2SA2164Silicon PNP epitaxial planar typeFor high-frequency amplificationUnit: mm0.33+0.05 0.10+0.050.02 0.02 Features3 High transfer ratio fT SSS-Mini type package, allowing downsizing of the equipment andautomatic insertion through the tape packing.0.23+0.05 1 20.02(0.40)(0.40)0.800.05 Absolute Maximum Ratings Ta = 25C1.
0.6. Size:90K isahaya
2sa2167.pdf
2SA2167FOR HIGH CURRENT DRIVE APPLICATIONSILICON PNP EPITAXIAL TYPEUnitmmOUTLINE DRAWING DESCRIPTION 4.6MAX2SA2167 is a silicon PNP epitaxial type transistor. 1.6 1.5It is designed with high voltage, high Collector current, high Collector dissipation. CE BFEATURE 0.53High voltage VCEO=-60V MAX1.50.48MAX 0.4High Collector current IC=-2A 3.0Lo
0.7. Size:233K inchange semiconductor
2sa2169.pdf
isc Silicon PNP Power Transistor 2SA2169DESCRIPTIONLarge current capacitanceHigh-speed switching100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationComplementary to 2SC6017APPLICATIONSrelay drivers,lamp drivers,motor driversABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltag
Otros transistores... 2SA210
, 2SA210H
, 2SA211
, 2SA212
, 2SA212H
, 2SA213
, 2SA214
, 2SA215
, TIP122
, 2SA217
, 2SA217H
, 2SA218
, 2SA219
, 2SA22
, 2SA220
, 2SA221
, 2SA222
.
