Биполярный транзистор 2SA216 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SA216
Тип материала: Ge
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 0.015 W
Макcимально допустимое напряжение коллектор-база (Ucb): 15 V
Макcимальный постоянный ток коллектора (Ic): 0.002 A
Предельная температура PN-перехода (Tj): 85 °C
Граничная частота коэффициента передачи тока (ft): 50 MHz
Ёмкость коллекторного перехода (Cc): 2 pf
Статический коэффициент передачи тока (hfe): 40
Корпус транзистора: TO1
2SA216 Datasheet (PDF)
2sa2169-e 2sa2169-tl-e.pdf
2SA2169/2SC6017Ordering number : EN8275ASANYO SemiconductorsDATA SHEETPNP/NPN Epitaxial Planar Silicon Transistor2SA2169/2SC6017 High-Current SwitchingApplicationsApplications Relay drivers, lamp drivers, motor driversFeatures Adoption of MBIT processes Large current capacitance Low collector-to-emitter saturation voltage High-speed switching( ): 2SA
2sa2169 2sc6017.pdf
Ordering number : ENN82752SA2169 / 2SC6017PNP / NPN Epitaxial Planar Silicon TransistorsHigh-Current Switching2SA2169 / 2SC6017ApplicationsApplications Relay drivers, lamp drivers, motor drivers.Features Adoption of MBIT process. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching.Specifications ( ) : 2SA2169Abs
2sa2169 2sc6017.pdf
Ordering number : EN8275A2SA2169/2SC6017Bipolar Transistorhttp://onsemi.com(-)50V, (-)10A, Low VCE(sat), (PNP)NPN Single TP/TP-FAApplications Relay drivers, lamp drivers, motor driversFeatures Adoption of MBIT processes Large current capacity Low collector-to-emitter saturation voltage High-speed switching( ): 2SA2169Specifications Absolute Maximum R
2sa2164.pdf
Transistors 2SA2164Silicon PNP epitaxial planar typeFor high-frequency amplificationUnit: mm0.33+0.05 0.10+0.050.02 0.02 Features3 High transfer ratio fT SSS-Mini type package, allowing downsizing of the equipment andautomatic insertion through the tape packing.0.23+0.05 1 20.02(0.40)(0.40)0.800.05 Absolute Maximum Ratings Ta = 25C1.
2sa2167.pdf
2SA2167FOR HIGH CURRENT DRIVE APPLICATIONSILICON PNP EPITAXIAL TYPEUnitmmOUTLINE DRAWING DESCRIPTION 4.6MAX2SA2167 is a silicon PNP epitaxial type transistor. 1.6 1.5It is designed with high voltage, high Collector current, high Collector dissipation. CE BFEATURE 0.53High voltage VCEO=-60V MAX1.50.48MAX 0.4High Collector current IC=-2A 3.0Lo
2sa2169.pdf
isc Silicon PNP Power Transistor 2SA2169DESCRIPTIONLarge current capacitanceHigh-speed switching100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationComplementary to 2SC6017APPLICATIONSrelay drivers,lamp drivers,motor driversABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltag
Другие транзисторы... 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , TIP35C , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050