2SA218 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SA218  📄📄 

Material: Ge

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.05 W

Tensión colector-base (Vcb): 20 V

Corriente del colector DC máxima (Ic): 0.01 A

Temperatura operativa máxima (Tj): 75 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 12 MHz

Capacitancia de salida (Cc): 4 pF

Ganancia de corriente contínua (hFE): 45

Encapsulados: TO44

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2SA218 datasheet

 0.1. Size:206K  toshiba
 2sa2184.pdf pdf_icon

2SA218

2SA2184 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA2184 High Voltage Switching Applications Unit mm High voltage VCEO = -550 V High speed tf = 40 ns (typ.) (IC = -0.5A) Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO -550 V Collector-emitter voltage VCEO -550 V Emitter-base voltage VEBO -7 V DC IC -1

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 2sa2183.pdf pdf_icon

2SA218

2SA2183 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2183 High Current Switching Applications Unit mm Low collector-emitter saturation VCE(sat) = -1.0 V max Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO -60 V Collector-emitter voltage VCEO -60 V Emitter-base voltage VEBO -7 V DC IC -5.0 A Collector current

 0.3. Size:166K  toshiba
 2sa2182.pdf pdf_icon

2SA218

2SA2182 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2182 Unit mm Power Amplifier Applications Driver Stage Amplifier Applications High transition frequency fT = 80 MHz (typ.) Absolute Maximum Ratings (Tc = 25 C) Characteristic Symbol Rating Unit Collector-base voltage VCBO - 230 V Collector-emitter voltage VCEO - 230 V Emitter-base voltage VEBO - 5 V DC IC - 1.0 A

 0.4. Size:32K  sanyo
 2sa2186.pdf pdf_icon

2SA218

Ordering number ENA0269 2SA2186 PNP Epitaxial Planar Silicon Transistor 2SA2186 High-Current Switching Applications Applications Voltage regulators, relay drivers, lamp drivers, electrical equipment. Features Adoption of MBIT processes. High current capacity. Low collector-to-emitter saturation voltage. High-speed switching. Specifications Absolute Maximum Rat

MOSTRAR MÁS

Otros transistores... 2SA212, 2SA212H, 2SA213, 2SA214, 2SA215, 2SA216, 2SA217, 2SA217H, TIP122, 2SA219, 2SA22, 2SA220, 2SA221, 2SA222, 2SA223, 2SA224, 2SA225