2SA220 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2SA220
   Material: Ge
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 0.05 W
   Tensión colector-base (Vcb): 20 V
   Corriente del colector DC máxima (Ic): 0.01 A
   Temperatura operativa máxima (Tj): 75 °C

CARACTERÍSTICAS ELÉCTRICAS

   Transición de frecuencia (ft): 20 MHz
   Capacitancia de salida (Cc): 4 pF
   Ganancia de corriente contínua (hfe): 40
   Paquete / Cubierta: TO44

Búsqueda de reemplazo de transistor bipolar 2SA220

2SA220 Datasheet (PDF)

0.1. Size:309K toshiba
2sa2206.pdf

2SA2206 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2206 Power Amplifier Applications Unit: mm Power Switching Applications Low collector emitter saturation voltage : V = -0.5 V (max) (I = -1A) CE (sat) CHigh-speed switching: t = 300 ns (typ.) stgComplementary to 2SC6124 Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Collector-base volt

0.2. Size:39K sanyo
2sa2205.pdf

Ordering number : ENA05442SA2205SANYO SemiconductorsDATA SHEETPNP Epitaxial Planar Silicon Transistor2SA2205High-Voltage Switching ApplicationsApplications DC / DC converter, Relay drivers, lamp drivers, motor drivers.Features Adoption of FBET, MBIT processes. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching.

0.3. Size:58K sanyo
2sa2202.pdf

Ordering number : ENA0583 2SA2202SANYO SemiconductorsDATA SHEETPNP Epitaxial Planar Silicon Transistor2SA2202High-Voltage Switching ApplicationsApplications DC / DC converters, relay drivers, lamp drivers, motor drivers, flash.Features Adoption of FBET, MBIT processes. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switc

0.4. Size:364K onsemi
2sa2205.pdf

Ordering number : ENA0544A2SA2205Bipolar Transistorhttp://onsemi.com-100V, -2A, Low VCE(sat), PNP Single TP/TP-FAApplications DC / DC converter, Relay drivers, lamp drivers, motor driversFeatures Adoption of FBET, MBIT processes Large current capacity Low collector-to-emitter saturation voltage High-speed switching High allowable power dissipationSp

0.5. Size:277K onsemi
2sa2202.pdf

Ordering number : ENA0583A2SA2202Bipolar Transistorhttp://onsemi.com ( )100V, 2A, Low VCE sat PNP Single PCPApplicaitons DC / DC converters, relay drivers, lamp drivers, motor drivers, flashFeatures Adoption of FBET, MBIT processes Large current capacity Low collector to emitter saturation voltage High-speed switching High allowable power dis

0.6. Size:285K onsemi
2sa2205-e 2sa2205.pdf