2SA220 Datasheet and Replacement

2SA2206 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2206 Power Amplifier Applications Unit: mm Power Switching Applications Low collector emitter saturation voltage : V = -0.5 V (max) (I = -1A) CE (sat) CHigh-speed switching: t = 300 ns (typ.) stgComplementary to 2SC6124 Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Collector-base volt

Ordering number : ENA05442SA2205SANYO SemiconductorsDATA SHEETPNP Epitaxial Planar Silicon Transistor2SA2205High-Voltage Switching ApplicationsApplications DC / DC converter, Relay drivers, lamp drivers, motor drivers.Features Adoption of FBET, MBIT processes. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching.

Ordering number : ENA0583 2SA2202SANYO SemiconductorsDATA SHEETPNP Epitaxial Planar Silicon Transistor2SA2202High-Voltage Switching ApplicationsApplications DC / DC converters, relay drivers, lamp drivers, motor drivers, flash.Features Adoption of FBET, MBIT processes. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switc

Ordering number : ENA0544A2SA2205Bipolar Transistorhttp://onsemi.com-100V, -2A, Low VCE(sat), PNP Single TP/TP-FAApplications DC / DC converter, Relay drivers, lamp drivers, motor driversFeatures Adoption of FBET, MBIT processes Large current capacity Low collector-to-emitter saturation voltage High-speed switching High allowable power dissipationSp

Ordering number : ENA0583A2SA2202Bipolar Transistorhttp://onsemi.com ( )100V, 2A, Low VCE sat PNP Single PCPApplicaitons DC / DC converters, relay drivers, lamp drivers, motor drivers, flashFeatures Adoption of FBET, MBIT processes Large current capacity Low collector to emitter saturation voltage High-speed switching High allowable power dis

Ordering number : ENA0544A2SA2205Bipolar Transistorhttp://onsemi.com-100V, -2A, Low VCE(sat), PNP Single TP/TP-FAApplications DC / DC converter, Relay drivers, lamp drivers, motor driversFeatures Adoption of FBET, MBIT processes Large current capacity Low collector-to-emitter saturation voltage High-speed switching High allowable power dissipationSp