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2SA50 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SA50
   Material: Ge
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.055 W
   Tensión colector-base (Vcb): 18 V
   Tensión emisor-base (Veb): 12 V
   Corriente del colector DC máxima (Ic): 0.024 A
   Temperatura operativa máxima (Tj): 75 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 6 MHz
   Capacitancia de salida (Cc): 13 pF
   Ganancia de corriente contínua (hfe): 70
   Paquete / Cubierta: TO1
 

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2SA50 Datasheet (PDF)

 0.1. Size:756K  1
2sa509.pdf pdf_icon

2SA50

 0.2. Size:94K  toshiba
2sa496 2sa505.pdf pdf_icon

2SA50

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

 0.3. Size:306K  vishay
vs-fa72sa50lc.pdf pdf_icon

2SA50

VS-FA72SA50LCwww.vishay.comVishay SemiconductorsPower MOSFET, 72 AFEATURES Fully isolated package Easy to use and parallel Low on-resistance Dynamic dV/dt rating Fully avalanche rated Simple drive requirements Low gate charge deviceSOT-227 Low drain to case capacitance Low internal inductance UL approved file E78996 Designed for

 0.4. Size:214K  inchange semiconductor
2sa505.pdf pdf_icon

2SA50

isc Silicon PNP Power Transistor 2SA505DESCRIPTIONCollector-Emitter Breakdown Voltage-V = -50V (Min.)(BR)CEOCollector-Emitter Saturation Voltage-V = -0.8V (Max.)@ I = -500mACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for medium power amplifier applications.ABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBO

Otros transistores... 2SA496R , 2SA496Y , 2SA497 , 2SA498 , 2SA499 , 2SA499O , 2SA499R , 2SA499Y , S9013 , 2SA500 , 2SA500O , 2SA500R , 2SA500Y , 2SA501 , 2SA502 , 2SA503 , 2SA503G .

History: 2SCR554P5 | 2SC1410 | 2SD1266A | MPS2222R | BUW11W

 

 
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