2SA50 Specs and Replacement

Type Designator: 2SA50

Material of Transistor: Ge

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.055 W

Maximum Collector-Base Voltage |Vcb|: 18 V

Maximum Emitter-Base Voltage |Veb|: 12 V

Maximum Collector Current |Ic max|: 0.024 A

Max. Operating Junction Temperature (Tj): 75 °C

Electrical Characteristics

Transition Frequency (ft): 6 MHz

Collector Capacitance (Cc): 13 pF

Forward Current Transfer Ratio (hFE), MIN: 70

Noise Figure, dB: -

Package: TO1

 2SA50 Substitution

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2SA50 datasheet

 0.1. Size:756K  1

 2sa509.pdf pdf_icon

2SA50

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 0.2. Size:94K  toshiba

 2sa496 2sa505.pdf pdf_icon

2SA50

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 0.3. Size:306K  vishay

 vs-fa72sa50lc.pdf pdf_icon

2SA50

VS-FA72SA50LC www.vishay.com Vishay Semiconductors Power MOSFET, 72 A FEATURES Fully isolated package Easy to use and parallel Low on-resistance Dynamic dV/dt rating Fully avalanche rated Simple drive requirements Low gate charge device SOT-227 Low drain to case capacitance Low internal inductance UL approved file E78996 Designed for ... See More ⇒

 0.4. Size:214K  inchange semiconductor

 2sa505.pdf pdf_icon

2SA50

isc Silicon PNP Power Transistor 2SA505 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -50V (Min.) (BR)CEO Collector-Emitter Saturation Voltage- V = -0.8V (Max.)@ I = -500mA CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for medium power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBO... See More ⇒

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Detailed specifications: 2SA496R, 2SA496Y, 2SA497, 2SA498, 2SA499, 2SA499O, 2SA499R, 2SA499Y, 13005, 2SA500, 2SA500O, 2SA500R, 2SA500Y, 2SA501, 2SA502, 2SA503, 2SA503G

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