2SA500O Todos los transistores

 

2SA500O . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SA500O
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.25 W
   Tensión colector-base (Vcb): 30 V
   Tensión colector-emisor (Vce): 20 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 100 MHz
   Capacitancia de salida (Cc): 7 pF
   Ganancia de corriente contínua (hfe): 60
   Paquete / Cubierta: TO18

 Búsqueda de reemplazo de transistor bipolar 2SA500O

 

2SA500O Datasheet (PDF)

 9.1. Size:756K  1
2sa509.pdf

2SA500O
2SA500O

 9.2. Size:94K  toshiba
2sa496 2sa505.pdf

2SA500O
2SA500O

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

 9.3. Size:306K  vishay
vs-fa72sa50lc.pdf

2SA500O
2SA500O

VS-FA72SA50LCwww.vishay.comVishay SemiconductorsPower MOSFET, 72 AFEATURES Fully isolated package Easy to use and parallel Low on-resistance Dynamic dV/dt rating Fully avalanche rated Simple drive requirements Low gate charge deviceSOT-227 Low drain to case capacitance Low internal inductance UL approved file E78996 Designed for

 9.4. Size:214K  inchange semiconductor
2sa505.pdf

2SA500O
2SA500O

isc Silicon PNP Power Transistor 2SA505DESCRIPTIONCollector-Emitter Breakdown Voltage-V = -50V (Min.)(BR)CEOCollector-Emitter Saturation Voltage-V = -0.8V (Max.)@ I = -500mACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for medium power amplifier applications.ABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBO

Otros transistores... 2SA497 , 2SA498 , 2SA499 , 2SA499O , 2SA499R , 2SA499Y , 2SA50 , 2SA500 , BC639 , 2SA500R , 2SA500Y , 2SA501 , 2SA502 , 2SA503 , 2SA503G , 2SA503O , 2SA503Y .

 

 
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