2SA509 Todos los transistores


2SA509 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SA509

Material: Si

Polaridad de transistor: PNP


Disipación total del dispositivo (Pc): 0.6 W

Tensión colector-base (Vcb): 35 V

Tensión colector-emisor (Vce): 30 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 0.5 A

Temperatura operativa máxima (Tj): 150 °C


Producto de corriente -- ganancia — ancho de banda (ft): 70 MHz

Capacitancia de salida (Cc): 30 pF

Ganancia de corriente contínua (hfe): 70

Paquete / Caja (carcasa): TO92

Búsqueda de reemplazo de transistor bipolar 2SA509


2SA509 Datasheet (PDF)

9.1. 2sa496 2sa505.pdf Size:94K _toshiba

2SA509 2SA509

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

9.2. vs-fa72sa50lc.pdf Size:306K _vishay

2SA509 2SA509

VS-FA72SA50LCwww.vishay.comVishay SemiconductorsPower MOSFET, 72 AFEATURES Fully isolated package Easy to use and parallel Low on-resistance Dynamic dV/dt rating Fully avalanche rated Simple drive requirements Low gate charge deviceSOT-227 Low drain to case capacitance Low internal inductance UL approved file E78996 Designed for

 9.3. 2sa505.pdf Size:214K _inchange_semiconductor

2SA509 2SA509

isc Silicon PNP Power Transistor 2SA505DESCRIPTIONCollector-Emitter Breakdown Voltage-V = -50V (Min.)(BR)CEOCollector-Emitter Saturation Voltage-V = -0.8V (Max.)@ I = -500mACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for medium power amplifier applications.ABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBO

Otros transistores... 2SA504Y , 2SA505 , 2SA505O , 2SA505R , 2SA505Y , 2SA506 , 2SA507 , 2SA508 , S8550 , 2SA509G , 2SB562-C , 2SA509GTM , 2SA509O , 2SA509Y , 2SA51 , 2SA510 , 2SA510O .


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