All Transistors. 2SA509 Datasheet

 

2SA509 Datasheet, Equivalent, Cross Reference Search

Type Designator: 2SA509

Material of Transistor: Si

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 0.6 W

Maximum Collector-Base Voltage |Vcb|: 35 V

Maximum Collector-Emitter Voltage |Vce|: 30 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 70 MHz

Collector Capacitance (Cc): 30 pF

Forward Current Transfer Ratio (hFE), MIN: 70

Noise Figure, dB: -

Package: TO98-1

2SA509 Transistor Equivalent Substitute - Cross-Reference Search

 

2SA509 Datasheet (PDF)

9.1. 2sa496 2sa505.pdf Size:94K _toshiba

2SA509
2SA509

 This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

9.2. vs-fa72sa50lc.pdf Size:306K _vishay

2SA509
2SA509

VS-FA72SA50LC www.vishay.com Vishay Semiconductors Power MOSFET, 72 A FEATURES • Fully isolated package • Easy to use and parallel • Low on-resistance • Dynamic dV/dt rating • Fully avalanche rated • Simple drive requirements • Low gate charge device SOT-227 • Low drain to case capacitance • Low internal inductance • UL approved file E78996 • Designed for

 9.3. 2sa505.pdf Size:214K _inchange_semiconductor

2SA509
2SA509

isc Silicon PNP Power Transistor 2SA505 DESCRIPTION ·Collector-Emitter Breakdown Voltage- V = -50V (Min.) (BR)CEO ·Collector-Emitter Saturation Voltage- V = -0.8V (Max.)@ I = -500mA CE(sat) C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for medium power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBO

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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