1801 Datasheet. Equivalente

 0.1. Size:84K  philips
 lle18010x 2.pdf

DISCRETE SEMICONDUCTORS DATA SHEET M3D159 LLE18010X NPN microwave power transistor 1999 Apr 22 Product specification Supersedes data of December 1994 Philips Semiconductors Product specification NPN microwave power transistor LLE18010X FEATURES QUICK REFERENCE DATA Microwave performance up to Tmb =25 C in a common emitter class AB Diffused emitter ballasting resistors amplif

 0.2. Size:122K  toshiba
 2sa1801.pdf

 0.3. Size:111K  sanyo
 2sb1201 2sd1801.pdf

Ordering number ENN2112B PNP/NPN Epitaxial Planar Silicon Transistors 2SB1201/2SD1801 High-Current Switching Applications Applications Package Dimensions Voltage regulators, relay drivers, lamp drivers, unit mm electrical equipment. 2045B [2SB1201/2SD1801] Features 6.5 2.3 5.0 Adoption of FBET, MBIT processes. 0.5 4 Large current capacity and wide ASO. Low colle

 0.4. Size:143K  sanyo
 2sd1801.pdf

Ordering number EN2112B PNP/NPN Epitaxial Planar Silicon Transistors 2SB1201/2SD1801 High-Current Switching Applications Applications Package Dimensions Voltage regulators, relay drivers, lamp drivers, unit mm electrical equipment. 2045B [2SB1201/2SD1801] Features Adoption of FBET, MBIT processes. Large current capacity and wide ASO. Low collector-to-emitter saturat

 0.5. Size:652K  infineon
 6ps18012e4fg35689.pdf

 0.6. Size:652K  infineon
 6ps18012e4fg34676.pdf

 0.7. Size:652K  infineon
 2ps18012e44g37090.pdf

 0.8. Size:652K  infineon
 2ps18012e44f34383.pdf

 0.9. Size:388K  onsemi
 2sb1201 2sd1801.pdf

Ordering number EN2112C 2SB1201/2SD1801 Bipolar Transistor http //onsemi.com ( ) ( ) ( ) ( ) 50V, 2A, Low VCE sat , PNP NPN Single TP/TP-FA Applications Voltage regulators, relay drivers, lamp drivers, electrical equipment Features Adoption of FBET, MBIT processes Large current capacitance and wide ASO Low collector-to-emitter saturation voltage Fast swit

 0.10. Size:70K  ape
 ap1801gu.pdf

AP1801GU Pb Free Plating Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Capable of 2.5V gate drive BVDSS -20V D D Lower on-resistance RDS(ON) 70m D D G Surface mount package ID -4A S S S 2021-8 Description D Advanced Power MOSFETs utilized advanced processing techniques to achieve the

 0.11. Size:1586K  kexin
 2sd1801.pdf

SMD Type Transistors NPN Transistors 2SD1801 TO-252 Unit mm 6.50+0.15 -0.15 +0.1 2.30 -0.1 5.30+0.2 0.50 -0.7 -0.2 +0.8 Features Low collector-to-emitter saturation voltage. Fast switching speed. 0.127 Complementary to 2SB1201 0.80+0.1 max -0.1 2.3 0.60+ 0.1 1 Base - 0.1 +0.15 4.60 -0.15 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Pa

 0.12. Size:228K  inchange semiconductor
 2sd1801.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1801 DESCRIPTION Large current capacitance and wide ASO Small and slim package making it easy to make 2SD1801/2SB1201-used set smaller Low collector-to-emitter saturation voltage Fast switching speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATION