1801
Datasheet, Equivalent, Cross Reference Search
Type Designator: 1801
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.6
W
Maximum Collector-Base Voltage |Vcb|: 25
V
Maximum Collector-Emitter Voltage |Vce|: 30
V
Maximum Emitter-Base Voltage |Veb|: 4
V
Maximum Collector Current |Ic max|: 1
A
Max. Operating Junction Temperature (Tj): 150
°C
Forward Current Transfer Ratio (hFE), MIN: 110
Noise Figure, dB: -
Package:
TO92
1801
Transistor Equivalent Substitute - Cross-Reference Search
1801
Datasheet (PDF)
0.1. Size:84K philips
lle18010x 2.pdf 
DISCRETE SEMICONDUCTORSDATA SHEETM3D159LLE18010XNPN microwave power transistor1999 Apr 22Product specificationSupersedes data of December 1994Philips Semiconductors Product specificationNPN microwave power transistor LLE18010XFEATURES QUICK REFERENCE DATAMicrowave performance up to Tmb =25C in a common emitter class AB Diffused emitter ballasting resistorsamplif
0.3. Size:111K sanyo
2sb1201 2sd1801.pdf
Ordering number:ENN2112BPNP/NPN Epitaxial Planar Silicon Transistors2SB1201/2SD1801High-Current Switching ApplicationsApplications Package Dimensions Voltage regulators, relay drivers, lamp drivers,unit:mmelectrical equipment.2045B[2SB1201/2SD1801]Features6.52.35.0 Adoption of FBET, MBIT processes. 0.54 Large current capacity and wide ASO. Low colle
0.4. Size:143K sanyo
2sd1801.pdf
Ordering number:EN2112BPNP/NPN Epitaxial Planar Silicon Transistors2SB1201/2SD1801High-Current Switching ApplicationsApplications Package Dimensions Voltage regulators, relay drivers, lamp drivers,unit:mmelectrical equipment.2045B[2SB1201/2SD1801]Features Adoption of FBET, MBIT processes. Large current capacity and wide ASO. Low collector-to-emitter saturat
0.5. Size:652K infineon
6ps18012e4fg35689.pdf
/ Technical InformationIGBT-FF450R12KE4IGBT-modules62mm C-Serien Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled Diode 62mm C-series module with trench/fieldstop IGBT4 and Emitter Controlled diode IGBT- / IGBT,Inverter Preliminary Data / Maximum Rated Values
0.6. Size:652K infineon
6ps18012e4fg34676.pdf
/ Technical InformationIGBT-FF450R12KE4IGBT-modules62mm C-Serien Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled Diode 62mm C-series module with trench/fieldstop IGBT4 and Emitter Controlled diode IGBT- / IGBT,Inverter Preliminary Data / Maximum Rated Values
0.7. Size:652K infineon
2ps18012e44g37090.pdf
/ Technical InformationIGBT-FF450R12KE4IGBT-modules62mm C-Serien Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled Diode 62mm C-series module with trench/fieldstop IGBT4 and Emitter Controlled diode IGBT- / IGBT,Inverter Preliminary Data / Maximum Rated Values
0.8. Size:652K infineon
2ps18012e44f34383.pdf
/ Technical InformationIGBT-FF450R12KE4IGBT-modules62mm C-Serien Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled Diode 62mm C-series module with trench/fieldstop IGBT4 and Emitter Controlled diode IGBT- / IGBT,Inverter Preliminary Data / Maximum Rated Values
0.9. Size:388K onsemi
2sb1201 2sd1801.pdf
Ordering number : EN2112C2SB1201/2SD1801Bipolar Transistorhttp://onsemi.com() () ( ) ( )50V, 2A, Low VCE sat , PNP NPN Single TP/TP-FAApplications Voltage regulators, relay drivers, lamp drivers, electrical equipmentFeatures Adoption of FBET, MBIT processes Large current capacitance and wide ASO Low collector-to-emitter saturation voltage Fast swit
0.10. Size:70K ape
ap1801gu.pdf
AP1801GUPb Free Plating Product Advanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 2.5V gate drive BVDSS -20VDD Lower on-resistance RDS(ON) 70m DDG Surface mount package ID -4ASSS2021-8DescriptionDAdvanced Power MOSFETs utilized advanced processing techniquesto achieve the
0.11. Size:1586K kexin
2sd1801.pdf
SMD Type TransistorsNPN Transistors2SD1801TO-252 Unit: mm6.50+0.15-0.15+0.12.30 -0.15.30+0.2 0.50 -0.7-0.2 +0.8 Features Low collector-to-emitter saturation voltage. Fast switching speed.0.127 Complementary to 2SB12010.80+0.1 max-0.12.3 0.60+ 0.1 1 Base- 0.1+0.154.60 -0.152 Collector3 Emitter Absolute Maximum Ratings Ta = 25Pa
0.12. Size:228K inchange semiconductor
2sd1801.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1801DESCRIPTIONLarge current capacitance and wide ASOSmall and slim package making it easy to make 2SD1801/2SB1201-used set smallerLow collector-to-emitter saturation voltageFast switching speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATION
Datasheet: 17390
, 17391
, 17484
, 17520
, 17521
, 17560
, 17561
, 17597
, 2SD1555
, 1802
, 180T2
, 180T2A
, 181T2
, 181T2A
, 182T2
, 182T2A
, 182T2C
.
