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2SA629 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SA629
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.15 W
   Tensión colector-base (Vcb): 30 V
   Tensión colector-emisor (Vce): 25 V
   Tensión emisor-base (Veb): 4 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 50 MHz
   Ganancia de corriente contínua (hfe): 200
   Paquete / Cubierta: TO92

 Búsqueda de reemplazo de transistor bipolar 2SA629

 

2SA629 Datasheet (PDF)

 9.1. Size:145K  jmnic
2sa626.pdf

2SA629
2SA629

JMnic Product Specification Silicon PNP Power Transistors 2SA626 DESCRIPTION With TO-3 package Wide area of safe operation High current capability:IC=-6A APPLICATIONS For audio frequency output applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum ratings(Ta=) SYMBOL PARAMETER

 9.2. Size:145K  jmnic
2sa627.pdf

2SA629
2SA629

JMnic Product Specification Silicon PNP Power Transistors 2SA627 DESCRIPTION With TO-3 package Wide area of safe operation High current capability:IC=-7A APPLICATIONS For audio frequency output applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum ratings(Ta=) SYMBOL PARAMETER

 9.3. Size:212K  inchange semiconductor
2sa626.pdf

2SA629
2SA629

isc Silicon PNP Power Transistors 2SA626DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -70V(Min.)(BR)CEOLow Collector Saturation Voltage-: V = -1.5V(Max.)@ I = -5ACE(sat) CGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio frequency power amplifier and low speed switchingSuitable f

 9.4. Size:215K  inchange semiconductor
2sa627.pdf

2SA629
2SA629

isc Silicon PNP Power Transistors 2SA627DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -80V(Min.)(BR)CEOLow Collector Saturation Voltage-: V = -1.5V(Max.)@ I = -5ACE(sat) CGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio frequency power amplifier and low speed switchingSuitable f

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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