All Transistors. 2SA629 Datasheet

 

2SA629 Datasheet and Replacement


   Type Designator: 2SA629
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.15 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Collector-Emitter Voltage |Vce|: 25 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 50 MHz
   Forward Current Transfer Ratio (hFE), MIN: 200
   Noise Figure, dB: -
   Package: TO92
 

 2SA629 Substitution

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2SA629 Datasheet (PDF)

 9.1. Size:145K  jmnic
2sa626.pdf pdf_icon

2SA629

JMnic Product Specification Silicon PNP Power Transistors 2SA626 DESCRIPTION With TO-3 package Wide area of safe operation High current capability:IC=-6A APPLICATIONS For audio frequency output applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum ratings(Ta=) SYMBOL PARAMETER

 9.2. Size:145K  jmnic
2sa627.pdf pdf_icon

2SA629

JMnic Product Specification Silicon PNP Power Transistors 2SA627 DESCRIPTION With TO-3 package Wide area of safe operation High current capability:IC=-7A APPLICATIONS For audio frequency output applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum ratings(Ta=) SYMBOL PARAMETER

 9.3. Size:212K  inchange semiconductor
2sa626.pdf pdf_icon

2SA629

isc Silicon PNP Power Transistors 2SA626DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -70V(Min.)(BR)CEOLow Collector Saturation Voltage-: V = -1.5V(Max.)@ I = -5ACE(sat) CGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio frequency power amplifier and low speed switchingSuitable f

 9.4. Size:215K  inchange semiconductor
2sa627.pdf pdf_icon

2SA629

isc Silicon PNP Power Transistors 2SA627DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -80V(Min.)(BR)CEOLow Collector Saturation Voltage-: V = -1.5V(Max.)@ I = -5ACE(sat) CGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio frequency power amplifier and low speed switchingSuitable f

Datasheet: 2SA622 , 2SA623 , 2SA624 , 2SA625 , 2SA626 , 2SA627 , 2SA628 , 2SA628A , S8550 , 2SA631 , 2SA633 , 2SA634 , 2SA634L , 2SA634Z , 2SA635 , 2SA636 , 2SA636A .

History: MMBTA13LT1G | T2071 | TIP50J3 | MMUN2233 | D32W7 | CHFMG3GP | 2SB858B

Keywords - 2SA629 transistor datasheet

 2SA629 cross reference
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