2SA670 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA670 DESCRIPTION With TO-220 package Low collector saturation voltage APPLICATIONS Inverters;converters Power amplification Switching regulator ,driver PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol3 BaseAb

Preliminary Datasheet R07DS0430EJ04002SA673A(K) (Previous: REJ03G0627-0300)Rev.4.00Silicon PNP Epitaxial Jun 07, 2011Application Low frequency amplifier Medium speed switching Outline RENESAS Package code: PRSS0003DA-A(Package name: TO-92 (1))1. Emitter2. Collector3. Base321Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings UnitCollect

Preliminary Datasheet R07DS0429EJ03002SA673, 2SA673A (Previous: REJ03G0626-0200)Rev.3.00Silicon PNP Epitaxial Jun 07, 2011Application Low frequency amplifier Complementary pair with 2SC1213 and 2SC1213A Outline RENESAS Package code: PRSS0003DA-A(Package name: TO-92 (1))1. Emitter2. Collector3. Base321Absolute Maximum Ratings (Ta = 25C) Item S

DATA SHEETSILICON TRANSISTOR2SA675PNP SILICON EPITAXIAL TRANSISTORFOR DRIVING FLUORESCENT INDICATOR PANNELThe 2SA675 is a resin sealed mold transistor and is ideal for PACKAGE DRAWING (UNIT: mm)dynamic drivers of counting indicator pannel such as fluorescentindicator pannel due to high voltage. High voltageVCBO > -80 V, VCER > -80 V Excellent linearity for current of D

2SA673, 2SA673ASilicon PNP EpitaxialApplication Low frequency amplifier Complementary pair with 2SC1213 and 2SC1213AOutlineTO-92 (1)1. Emitter2. Collector3. Base3212SA673, 2SA673AAbsolute Maximum Ratings (Ta = 25C)Item Symbol 2SA673 2SA673A UnitCollector to base voltage VCBO 35 50 VCollector to emitter voltage VCEO 35 50 VEmitter to base

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2SA673, 2SA673A PNP General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead free FEATURES TO-92 Low frequency amplifier G H Complementary pair with 2SC1213 and 2SC1213A 1Emitter 1112Collector 222 3Base 333J CLASSIFICATION OF hFE(1) A DProduct-Rank 2SA673-B 2SA673-C 2SA673-D Mil

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO 92 2SA673A TRANSISTOR (PNP) 1. EMITTER FEATURES 2. COLLECTOR Low Frequency Amplifier 3. BASE Complementary Pair with 2SC1213A MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50

JMnic Product Specification Silicon PNP Power Transistors 2SA679 2SA680 DESCRIPTION With TO-3 package Complement to type 2SC1079/1080 High power dissipation APPLICATIONS For audio power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum ratings(Ta=) SYMBOL PARAMET

JMnic Product Specification Silicon PNP Power Transistors 2SA671 DESCRIPTION With TO-220 package Complement to type 2SC1061 Low collector saturation voltage Note:type 2SA670 with short pin APPLICATIONS Designed for use in low frequency power amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified o

isc Silicon PNP Power Transistor 2SB679DESCRIPTIONHigh Power Dissipation-: PC= 100W(Max.)@T =25CCollector-Emitter Breakdown Voltage-: V = -120V(Min.)(BR)CEOComplement to Type 2SC1079Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)

isc Silicon PNP Power Transistor 2SA671DESCRIPTIONLow Collector Saturation Voltage-: V = -1.0V(Max)@ I = -2.0ACE(SUS) CDC Current Gain: h = 35-320@ I = -0.5AFE CComplement to Type 2SC1061Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in low frequency power amplifierapplications.ABSOLUTE MAXIMUM