2SA670 Datasheet and Replacement

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA670 DESCRIPTION With TO-220 package Low collector saturation voltage APPLICATIONS Inverters;converters Power amplification Switching regulator ,driver PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol3 BaseAb

Preliminary Datasheet R07DS0430EJ04002SA673A(K) (Previous: REJ03G0627-0300)Rev.4.00Silicon PNP Epitaxial Jun 07, 2011Application Low frequency amplifier Medium speed switching Outline RENESAS Package code: PRSS0003DA-A(Package name: TO-92 (1))1. Emitter2. Collector3. Base321Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings UnitCollect

Preliminary Datasheet R07DS0429EJ03002SA673, 2SA673A (Previous: REJ03G0626-0200)Rev.3.00Silicon PNP Epitaxial Jun 07, 2011Application Low frequency amplifier Complementary pair with 2SC1213 and 2SC1213A Outline RENESAS Package code: PRSS0003DA-A(Package name: TO-92 (1))1. Emitter2. Collector3. Base321Absolute Maximum Ratings (Ta = 25C) Item S

DATA SHEETSILICON TRANSISTOR2SA675PNP SILICON EPITAXIAL TRANSISTORFOR DRIVING FLUORESCENT INDICATOR PANNELThe 2SA675 is a resin sealed mold transistor and is ideal for PACKAGE DRAWING (UNIT: mm)dynamic drivers of counting indicator pannel such as fluorescentindicator pannel due to high voltage. High voltageVCBO > -80 V, VCER > -80 V Excellent linearity for current of D

2SA673, 2SA673ASilicon PNP EpitaxialApplication Low frequency amplifier Complementary pair with 2SC1213 and 2SC1213AOutlineTO-92 (1)1. Emitter2. Collector3. Base3212SA673, 2SA673AAbsolute Maximum Ratings (Ta = 25C)Item Symbol 2SA673 2SA673A UnitCollector to base voltage VCBO 35 50 VCollector to emitter voltage VCEO 35 50 VEmitter to base

AAA

2SA673, 2SA673A PNP General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead free FEATURES TO-92 Low frequency amplifier G H Complementary pair with 2SC1213 and 2SC1213A 1Emitter 1112Collector 222 3Base 333J CLASSIFICATION OF hFE(1) A DProduct-Rank 2SA673-B 2SA673-C 2SA673-D Mil

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO 92 2SA673A TRANSISTOR (PNP) 1. EMITTER FEATURES 2. COLLECTOR Low Frequency Amplifier 3. BASE Complementary Pair with 2SC1213A MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50

JMnic Product Specification Silicon PNP Power Transistors 2SA679 2SA680 DESCRIPTION With TO-3 package Complement to type 2SC1079/1080 High power dissipation APPLICATIONS For audio power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum ratings(Ta=) SYMBOL PARAMET

JMnic Product Specification Silicon PNP Power Transistors 2SA671 DESCRIPTION With TO-220 package Complement to type 2SC1061 Low collector saturation voltage Note:type 2SA670 with short pin APPLICATIONS Designed for use in low frequency power amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified o

isc Silicon PNP Power Transistor 2SB679DESCRIPTIONHigh Power Dissipation-: PC= 100W(Max.)@T =25CCollector-Emitter Breakdown Voltage-: V = -120V(Min.)(BR)CEOComplement to Type 2SC1079Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)

isc Silicon PNP Power Transistor 2SA671DESCRIPTIONLow Collector Saturation Voltage-: V = -1.0V(Max)@ I = -2.0ACE(SUS) CDC Current Gain: h = 35-320@ I = -0.5AFE CComplement to Type 2SC1061Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in low frequency power amplifierapplications.ABSOLUTE MAXIMUM