2SA878 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SA878
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 100 W
Tensión colector-base (Vcb): 120 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 10 A
Temperatura operativa máxima (Tj): 125 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 15 MHz
Capacitancia de salida (Cc): 255 pF
Ganancia de corriente contínua (hfe): 60
Paquete / Cubierta: TO3
Búsqueda de reemplazo de 2SA878
2SA878 Datasheet (PDF)
2sa877 2sa878.pdf

JMnic Product Specification Silicon PNP Power Transistors 2SA877 2SA878 DESCRIPTION With TO-3 package High power dissipation APPLICATIONS Power amplifier applications Recommended for high-power high-fidelity audio frequency amplifier output stage PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute
2sa877 2sa878.pdf

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA877 2SA878 DESCRIPTION With TO-3 package High power dissipation APPLICATIONS Power amplifier applications Recommended for high-power high-fidelity audio frequency amplifier output stage PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 Co
Otros transistores... 2SA874 , 2SA874M , 2SA876 , 2SA876H , 2SA876HA , 2SA876HB , 2SA876HC , 2SA877 , 2SD1555 , 2SA879 , 2SA88 , 2SA880 , 2SA881 , 2SA882 , 2SA883 , 2SA884 , 2SA885 .
History: 16924
History: 16924



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