2SA886 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SA886  📄📄 

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 1.2 W

Tensión colector-base (Vcb): 50 V

Tensión colector-emisor (Vce): 40 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 1 A

Temperatura operativa máxima (Tj): 125 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 100 MHz

Ganancia de corriente contínua (hFE): 60

Encapsulados: TO126

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2SA886 datasheet

 ..1. Size:94K  panasonic
2sa886.pdf pdf_icon

2SA886

Power Transistors 2SA0886 (2SA886) Silicon PNP epitaxial planar type For low-frequency power amplification Unit mm 8.0+0.5 0.1 3.2 0.2 Complementary to 2SC1847 3.16 0.1 Features Output of 4 W can be obtained by a complementary pair with 2SC1847 TO-126B package which requires no insulation plate for installa- tion to the heat sink Absolute Maximum Ratings

 ..2. Size:193K  jmnic
2sa886.pdf pdf_icon

2SA886

JMnic Product Specification Silicon PNP Power Transistors 2SA886 DESCRIPTION With TO-126 package Complement to type 2SC1847 Low collector-emitter saturation voltage APPLICATIONS For low-frequency power amplification PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute Maximun Ratings (Ta=25 ) SYMBOL PARAMETER CONDITIO

 ..3. Size:222K  inchange semiconductor
2sa886.pdf pdf_icon

2SA886

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA886 DESCRIPTION With TO-126 package Complement to type 2SC1847 Low collector-emitter saturation voltage APPLICATIONS For low-frequency power amplification PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute Maximun Ratings (Ta=25 ) SYMBOL P

 9.1. Size:105K  1
2sa881.pdf pdf_icon

2SA886

Otros transistores... 2SA879, 2SA88, 2SA880, 2SA881, 2SA882, 2SA883, 2SA884, 2SA885, BDT88, 2SA887, 2SA888, 2SA889, 2SA89, 2SA890, 2SA891, 2SA892, 2SA893