2SA886 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SA886
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 1.2 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 125 °C
Transition Frequency (ft): 100 MHz
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
Package: TO126
2SA886 Transistor Equivalent Substitute - Cross-Reference Search
2SA886 Datasheet (PDF)
2sa886.pdf
Power Transistors2SA0886 (2SA886)Silicon PNP epitaxial planar typeFor low-frequency power amplificationUnit: mm8.0+0.50.13.20.2Complementary to 2SC1847 3.160.1 Features Output of 4 W can be obtained by a complementary pair with2SC1847 TO-126B package which requires no insulation plate for installa-tion to the heat sink Absolute Maximum Ratings
2sa886.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA886 DESCRIPTION With TO-126 package Complement to type 2SC1847 Low collector-emitter saturation voltage APPLICATIONS For low-frequency power amplification PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute Maximun Ratings (Ta=25) SYMBOL PARAMETER CONDITIO
2sa886.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA886 DESCRIPTION With TO-126 package Complement to type 2SC1847 Low collector-emitter saturation voltage APPLICATIONS For low-frequency power amplification PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute Maximun Ratings (Ta=25) SYMBOL P
2sa885.pdf
Power Transistors2SA0885 (2SA885)2SA0885 (2SA885)2SA0885 (2SA885)2SA0885 (2SA885)2SA0885 (2SA885)Silicon PNP epitaxial planar typeUnit: mmFor low-frequency power amplification8.0+0.50.13.20.2Complementary to 2SC1846 3.160.1 Features Output of 3 W can be obtained by a complementary pair with2SC1846 TO-126B package which requires no insulation plat
2sa885.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA885 DESCRIPTION With TO-126 package Complement to type 2SC1846 Low collector-emitter saturation voltage APPLICATIONS For low-frequency power amplification PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute Maximun Ratings (Ta=25) SYMBOL PARAMETER CONDITIO
2sa882.pdf
Product Specification www.jmnic.com Silicon PNP Power Transistors 2SA882 DESCRIPTION With TO-3 package Excellent Safe Operating Area APPLICATIONS For power and switching applications PINNING PIN DESCRIPTION1 Base 2 Emitter3 CollectorFig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector
2sa887.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA887 DESCRIPTION With TO-202 package Complement to type 2SC1848 APPLICATIONS Medium power amplifier PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-202) and symbol3 EmitterAbsolute maximum ratings (Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base vo
2sa885 3ca885.pdf
2SA885(3CA885) PNP /SILICON PNP TRANSISTOR : Purpose: Medium power amplifier. :V , 2SC1846(3DA1846) 3W CE(sat)Features: Low V ,output of 3W can be obtained by a complementary pair with 2SC1846(3DA1846). CE(sat)/Absolute maximum ratings(Ta=25) Symbo
2sa885.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA885 DESCRIPTION With TO-126 package Complement to type 2SC1846 Low collector-emitter saturation voltage APPLICATIONS For low-frequency power amplification PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute Maximun Ratings (Ta=25) SYMBOL P
2sa882.pdf
isc Silicon PNP Power Transistor 2SA882DESCRIPTIONHigh Power Dissipation-: P = 100W(Max.)@T =25C CCollector-Emitter Breakdown Voltage-: V = -130V(Min.)(BR)CEOMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power and switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNI
2sa887.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA887 DESCRIPTION With TO-202 package Complement to type 2SC1848 APPLICATIONS Medium power amplifier PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-202) and symbol3 EmitterAbsolute maximum ratings (Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
