2SB106. Equivalente. Reemplazo. Todos los transistores. Hoja de especificaciones. Principales características

2SB106 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SB106

Material: Ge

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 3 W

Tensión colector-base (Vcb): 30 V

Tensión emisor-base (Veb): 10 V

Corriente del colector DC máxima (Ic): 0.5 A

Temperatura operativa máxima (Tj): 75 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 0.25 MHz

Ganancia de corriente contínua (hFE): 35

Encapsulados: MM5

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2SB106 datasheet

0.1. Size:185K toshiba
2sb1067.pdf pdf_icon

0.2. Size:150K nec
2sb1068.pdf pdf_icon

0.3. Size:46K rohm
2sb1066m 2sb1243.pdf pdf_icon

0.4. Size:39K rohm
2sb1064.pdf pdf_icon

0.5. Size:39K rohm
2sb1065.pdf pdf_icon

0.6. Size:67K panasonic
2sb1063.pdf pdf_icon

0.7. Size:411K hitachi
2sb1061.pdf pdf_icon

0.8. Size:57K no
2sb1062.pdf pdf_icon

0.9. Size:78K secos
2sb1068.pdf pdf_icon

2SB1068 -2A , -20V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES G H Low Collector Saturation Voltage High DC Current Gain Emitter Collector High Collector Power Dissipation Base J Complementary of the 2SD1513 A D Millimeter REF. Min

0.10. Size:159K jmnic
2sb1063.pdf pdf_icon

JMnic Product Specification Silicon PNP Power Transistors 2SB1063 DESCRIPTION With TO-220Fa package Complement to type 2SD1499 Wide area of safe operation High fT APPLICATIONS For high power amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-b

0.11. Size:149K jmnic
2sb1064.pdf pdf_icon

JMnic Product Specification Silicon PNP Power Transistors 2SB1064 DESCRIPTION With TO-220 package Complement to type 2SD1505 Low collector saturation voltage APPLICATIONS Designed for use in low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol 3 Base

0.12. Size:160K jmnic
2sb1069 2sb1069a.pdf pdf_icon

JMnic Product Specification Silicon PNP Power Transistors 2SB1069 2SB1069A DESCRIPTION With TO-220 package High speed switching Low collector saturation voltage APPLICATIONS For low-voltage switching applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol 3 Base Absolute maximum ratin

0.13. Size:154K jmnic
2sb1065.pdf pdf_icon

JMnic Product Specification Silicon PNP Power Transistors 2SB1065 DESCRIPTION With TO-126 package Complement to type 2SD1506 Low collector saturation voltage APPLICATIONS For use in low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMET

0.14. Size:219K inchange semiconductor
2sb1063.pdf pdf_icon

isc Silicon PNP Power Transistor 2SB1063 DESCRIPTION Low Collector Saturation Voltage- V = -2.0V(Max)@I = -3A CE(sat) C Good Linearity of h FE Wide Area of Safe Operation Complement to Type 2SD1499 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power amplification. ABSOLUTE MAXIMUM RATINGS(T =25 ) a

0.15. Size:217K inchange semiconductor
2sb1064.pdf pdf_icon

isc Silicon PNP Power Transistor 2SB1064 DESCRIPTION Low Collector Saturation Voltage V = -1.0V(Max)@I = -2A CE(sat) C Wide Area of Safe Operation Complement to Type 2SD1505 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL P

0.16. Size:125K inchange semiconductor
2sb1069 2sb1069a.pdf pdf_icon

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1069 2SB1069A DESCRIPTION With TO-220 package High speed switching Low collector saturation voltage APPLICATIONS For low-voltage switching applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol 3 Base Absol

0.17. Size:215K inchange semiconductor
2sb1065.pdf pdf_icon

isc Silicon PNP Power Transistor 2SB1065 DESCRIPTION Collector Saturation Voltage Low V = -1.0V(Max)@I = -2A CE(sat) C Wide Area of Safe Operation Complement to Type 2SD1506 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMB

0.18. Size:216K inchange semiconductor
2sb1069.pdf pdf_icon

isc Silicon PNP Power Transistor 2SB1069 DESCRIPTION Low Collector Saturation Voltage V = -0.5V(Max)@I = -2A CE(sat) C High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low voltage switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage

Otros transistores... 2SB1052 , 2SB1053 , 2SB1054 , 2SB1055 , 2SB1056 , 2SB1057 , 2SB1058 , 2SB1059 , TIP2955 , 2SB1060 , 2SB1061 , 2SB1062 , 2SB1063 , 2SB1064 , 2SB1065 , 2SB1066 , 2SB1067 .