Биполярный транзистор 2SB106 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SB106
Тип материала: Ge
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 3 W
Макcимально допустимое напряжение коллектор-база (Ucb): 30 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 10 V
Макcимальный постоянный ток коллектора (Ic): 0.5 A
Предельная температура PN-перехода (Tj): 75 °C
Граничная частота коэффициента передачи тока (ft): 0.25 MHz
Статический коэффициент передачи тока (hfe): 35
Корпус транзистора: MM5
2SB106 Datasheet (PDF)
2sb1068.pdf
2SB1068 -2A , -20V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES G H Low Collector Saturation Voltage High DC Current Gain EmitterCollector High Collector Power Dissipation Base J Complementary of the 2SD1513 A DMillimeter REF.Min
2sb1063.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SB1063 DESCRIPTION With TO-220Fa package Complement to type 2SD1499 Wide area of safe operation High fT APPLICATIONS For high power amplifier applications PINNING PIN DESCRIPTION1 Emitter 2 Collector3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-b
2sb1064.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SB1064 DESCRIPTION With TO-220 package Complement to type 2SD1505 Low collector saturation voltage APPLICATIONS Designed for use in low frequency power amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol3 Base
2sb1069 2sb1069a.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SB1069 2SB1069A DESCRIPTION With TO-220 package High speed switching Low collector saturation voltage APPLICATIONS For low-voltage switching applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol3 BaseAbsolute maximum ratin
2sb1065.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SB1065 DESCRIPTION With TO-126 package Complement to type 2SD1506 Low collector saturation voltage APPLICATIONS For use in low frequency power amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PARAMET
2sb1063.pdf
isc Silicon PNP Power Transistor 2SB1063DESCRIPTIONLow Collector Saturation Voltage-: V = -2.0V(Max)@I = -3ACE(sat) CGood Linearity of hFEWide Area of Safe OperationComplement to Type 2SD1499Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power amplification.ABSOLUTE MAXIMUM RATINGS(T =25)a
2sb1064.pdf
isc Silicon PNP Power Transistor 2SB1064DESCRIPTIONLow Collector Saturation Voltage: V = -1.0V(Max)@I = -2ACE(sat) CWide Area of Safe OperationComplement to Type 2SD1505Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL P
2sb1069 2sb1069a.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1069 2SB1069A DESCRIPTION With TO-220 package High speed switching Low collector saturation voltage APPLICATIONS For low-voltage switching applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol3 BaseAbsol
2sb1065.pdf
isc Silicon PNP Power Transistor 2SB1065DESCRIPTION Collector Saturation VoltageLow: V = -1.0V(Max)@I = -2ACE(sat) CWide Area of Safe OperationComplement to Type 2SD1506Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMB
2sb1069.pdf
isc Silicon PNP Power Transistor 2SB1069DESCRIPTIONLow Collector Saturation Voltage: V = -0.5V(Max)@I = -2ACE(sat) CHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low voltage switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage
Другие транзисторы... 2SB1052 , 2SB1053 , 2SB1054 , 2SB1055 , 2SB1056 , 2SB1057 , 2SB1058 , 2SB1059 , 2N4401 , 2SB1060 , 2SB1061 , 2SB1062 , 2SB1063 , 2SB1064 , 2SB1065 , 2SB1066 , 2SB1067 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050