2SB106 - параметры, поиск аналогов, даташиты транзистора

Биполярный транзистор 2SB106 Даташит. Аналоги

   Наименование производителя: 2SB106
   Тип материала: Ge
   Полярность: PNP
   Максимальная рассеиваемая мощность (Pc): 3 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 30 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 10 V
   Макcимальный постоянный ток коллектора (Ic): 0.5 A
   Предельная температура PN-перехода (Tj): 75 °C
   Граничная частота коэффициента передачи тока (ft): 0.25 MHz
   Статический коэффициент передачи тока (hfe): 35
   Корпус транзистора: MM5

Аналог (замена) для 2SB106

- подбор ⓘ биполярного транзистора по параметрам

2SB106 Datasheet (PDF)

0.1. Size:185K toshiba
2sb1067.pdf pdf_icon

0.2. Size:150K nec
2sb1068.pdf pdf_icon

0.3. Size:46K rohm
2sb1066m 2sb1243.pdf pdf_icon

0.4. Size:39K rohm
2sb1064.pdf pdf_icon

0.5. Size:39K rohm
2sb1065.pdf pdf_icon

0.6. Size:67K panasonic
2sb1063.pdf pdf_icon

0.7. Size:411K hitachi
2sb1061.pdf pdf_icon

0.8. Size:57K no
2sb1062.pdf pdf_icon

0.9. Size:78K secos
2sb1068.pdf pdf_icon

2SB1068 -2A , -20V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES G H Low Collector Saturation Voltage High DC Current Gain EmitterCollector High Collector Power Dissipation Base J Complementary of the 2SD1513 A DMillimeter REF.Min

0.10. Size:159K jmnic
2sb1063.pdf pdf_icon

JMnic Product Specification Silicon PNP Power Transistors 2SB1063 DESCRIPTION With TO-220Fa package Complement to type 2SD1499 Wide area of safe operation High fT APPLICATIONS For high power amplifier applications PINNING PIN DESCRIPTION1 Emitter 2 Collector3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-b

0.11. Size:149K jmnic
2sb1064.pdf pdf_icon

JMnic Product Specification Silicon PNP Power Transistors 2SB1064 DESCRIPTION With TO-220 package Complement to type 2SD1505 Low collector saturation voltage APPLICATIONS Designed for use in low frequency power amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol3 Base

0.12. Size:160K jmnic
2sb1069 2sb1069a.pdf pdf_icon

JMnic Product Specification Silicon PNP Power Transistors 2SB1069 2SB1069A DESCRIPTION With TO-220 package High speed switching Low collector saturation voltage APPLICATIONS For low-voltage switching applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol3 BaseAbsolute maximum ratin

0.13. Size:154K jmnic
2sb1065.pdf pdf_icon

JMnic Product Specification Silicon PNP Power Transistors 2SB1065 DESCRIPTION With TO-126 package Complement to type 2SD1506 Low collector saturation voltage APPLICATIONS For use in low frequency power amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PARAMET

0.14. Size:219K inchange semiconductor
2sb1063.pdf pdf_icon

isc Silicon PNP Power Transistor 2SB1063DESCRIPTIONLow Collector Saturation Voltage-: V = -2.0V(Max)@I = -3ACE(sat) CGood Linearity of hFEWide Area of Safe OperationComplement to Type 2SD1499Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power amplification.ABSOLUTE MAXIMUM RATINGS(T =25)a

0.15. Size:217K inchange semiconductor
2sb1064.pdf pdf_icon

isc Silicon PNP Power Transistor 2SB1064DESCRIPTIONLow Collector Saturation Voltage: V = -1.0V(Max)@I = -2ACE(sat) CWide Area of Safe OperationComplement to Type 2SD1505Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL P

0.16. Size:125K inchange semiconductor
2sb1069 2sb1069a.pdf pdf_icon

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1069 2SB1069A DESCRIPTION With TO-220 package High speed switching Low collector saturation voltage APPLICATIONS For low-voltage switching applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol3 BaseAbsol

0.17. Size:215K inchange semiconductor
2sb1065.pdf pdf_icon

isc Silicon PNP Power Transistor 2SB1065DESCRIPTION Collector Saturation VoltageLow: V = -1.0V(Max)@I = -2ACE(sat) CWide Area of Safe OperationComplement to Type 2SD1506Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMB

0.18. Size:216K inchange semiconductor
2sb1069.pdf pdf_icon

isc Silicon PNP Power Transistor 2SB1069DESCRIPTIONLow Collector Saturation Voltage: V = -0.5V(Max)@I = -2ACE(sat) CHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low voltage switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage

Другие транзисторы... 2SB1052 , 2SB1053 , 2SB1054 , 2SB1055 , 2SB1056 , 2SB1057 , 2SB1058 , 2SB1059 , 2SD669 , 2SB1060 , 2SB1061 , 2SB1062 , 2SB1063 , 2SB1064 , 2SB1065 , 2SB1066 , 2SB1067 .