2SB106 Specs and Replacement
Type Designator: 2SB106
Material of Transistor: Ge
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 3 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 75 °C
Electrical Characteristics
Transition Frequency (ft): 0.25 MHz
Forward Current Transfer Ratio (hFE), MIN: 35
Noise Figure, dB: -
Package: MM5
- BJT ⓘ Cross-Reference Search
2SB106 datasheet
0.9. Size:78K secos
2sb1068.pdf 
2SB1068 -2A , -20V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES G H Low Collector Saturation Voltage High DC Current Gain Emitter Collector High Collector Power Dissipation Base J Complementary of the 2SD1513 A D Millimeter REF. Min... See More ⇒
0.10. Size:159K jmnic
2sb1063.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SB1063 DESCRIPTION With TO-220Fa package Complement to type 2SD1499 Wide area of safe operation High fT APPLICATIONS For high power amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-b... See More ⇒
0.11. Size:149K jmnic
2sb1064.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SB1064 DESCRIPTION With TO-220 package Complement to type 2SD1505 Low collector saturation voltage APPLICATIONS Designed for use in low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol 3 Base... See More ⇒
0.12. Size:160K jmnic
2sb1069 2sb1069a.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SB1069 2SB1069A DESCRIPTION With TO-220 package High speed switching Low collector saturation voltage APPLICATIONS For low-voltage switching applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol 3 Base Absolute maximum ratin... See More ⇒
0.13. Size:154K jmnic
2sb1065.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SB1065 DESCRIPTION With TO-126 package Complement to type 2SD1506 Low collector saturation voltage APPLICATIONS For use in low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMET... See More ⇒
0.14. Size:219K inchange semiconductor
2sb1063.pdf
isc Silicon PNP Power Transistor 2SB1063 DESCRIPTION Low Collector Saturation Voltage- V = -2.0V(Max)@I = -3A CE(sat) C Good Linearity of h FE Wide Area of Safe Operation Complement to Type 2SD1499 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power amplification. ABSOLUTE MAXIMUM RATINGS(T =25 ) a... See More ⇒
0.15. Size:217K inchange semiconductor
2sb1064.pdf
isc Silicon PNP Power Transistor 2SB1064 DESCRIPTION Low Collector Saturation Voltage V = -1.0V(Max)@I = -2A CE(sat) C Wide Area of Safe Operation Complement to Type 2SD1505 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL P... See More ⇒
0.16. Size:125K inchange semiconductor
2sb1069 2sb1069a.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1069 2SB1069A DESCRIPTION With TO-220 package High speed switching Low collector saturation voltage APPLICATIONS For low-voltage switching applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol 3 Base Absol... See More ⇒
0.17. Size:215K inchange semiconductor
2sb1065.pdf
isc Silicon PNP Power Transistor 2SB1065 DESCRIPTION Collector Saturation Voltage Low V = -1.0V(Max)@I = -2A CE(sat) C Wide Area of Safe Operation Complement to Type 2SD1506 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMB... See More ⇒
0.18. Size:216K inchange semiconductor
2sb1069.pdf
isc Silicon PNP Power Transistor 2SB1069 DESCRIPTION Low Collector Saturation Voltage V = -0.5V(Max)@I = -2A CE(sat) C High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low voltage switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage... See More ⇒
Detailed specifications: 2SB1052
, 2SB1053
, 2SB1054
, 2SB1055
, 2SB1056
, 2SB1057
, 2SB1058
, 2SB1059
, TIP2955
, 2SB1060
, 2SB1061
, 2SB1062
, 2SB1063
, 2SB1064
, 2SB1065
, 2SB1066
, 2SB1067
.
History: 2SB1071
| 2SB1060
| 2SB1080
| RN1210
| 2SB1061
| NSBC123TF3
| 2SB1085
Keywords - 2SB106 pdf specs
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