2SB1062 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2SB1062
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 0.6 W
   Tensión colector-base (Vcb): 15 V
   Tensión colector-emisor (Vce): 10 V
   Tensión emisor-base (Veb): 7 V
   Corriente del colector DC máxima (Ic): 0.5 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Transición de frecuencia (ft): 130(typ) MHz
   Capacitancia de salida (Cc): 22 pF
   Ganancia de corriente contínua (hfe): 100
   Paquete / Cubierta: SC71

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2SB1062 Datasheet (PDF)

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2SB1068 -2A , -20V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES G H Low Collector Saturation Voltage High DC Current Gain EmitterCollector High Collector Power Dissipation Base J Complementary of the 2SD1513 A DMillimeter REF.Min

8.9. Size:159K jmnic
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JMnic Product Specification Silicon PNP Power Transistors 2SB1063 DESCRIPTION With TO-220Fa package Complement to type 2SD1499 Wide area of safe operation High fT APPLICATIONS For high power amplifier applications PINNING PIN DESCRIPTION1 Emitter 2 Collector3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-b

8.10. Size:149K jmnic
2sb1064.pdf pdf_icon

JMnic Product Specification Silicon PNP Power Transistors 2SB1064 DESCRIPTION With TO-220 package Complement to type 2SD1505 Low collector saturation voltage APPLICATIONS Designed for use in low frequency power amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol3 Base

8.11. Size:160K jmnic
2sb1069 2sb1069a.pdf pdf_icon

JMnic Product Specification Silicon PNP Power Transistors 2SB1069 2SB1069A DESCRIPTION With TO-220 package High speed switching Low collector saturation voltage APPLICATIONS For low-voltage switching applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol3 BaseAbsolute maximum ratin

8.12. Size:154K jmnic
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JMnic Product Specification Silicon PNP Power Transistors 2SB1065 DESCRIPTION With TO-126 package Complement to type 2SD1506 Low collector saturation voltage APPLICATIONS For use in low frequency power amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PARAMET

8.13. Size:219K inchange semiconductor
2sb1063.pdf pdf_icon

isc Silicon PNP Power Transistor 2SB1063DESCRIPTIONLow Collector Saturation Voltage-: V = -2.0V(Max)@I = -3ACE(sat) CGood Linearity of hFEWide Area of Safe OperationComplement to Type 2SD1499Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power amplification.ABSOLUTE MAXIMUM RATINGS(T =25)a

8.14. Size:217K inchange semiconductor
2sb1064.pdf pdf_icon

isc Silicon PNP Power Transistor 2SB1064DESCRIPTIONLow Collector Saturation Voltage: V = -1.0V(Max)@I = -2ACE(sat) CWide Area of Safe OperationComplement to Type 2SD1505Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL P

8.15. Size:125K inchange semiconductor
2sb1069 2sb1069a.pdf pdf_icon

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1069 2SB1069A DESCRIPTION With TO-220 package High speed switching Low collector saturation voltage APPLICATIONS For low-voltage switching applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol3 BaseAbsol

8.16. Size:215K inchange semiconductor
2sb1065.pdf pdf_icon

isc Silicon PNP Power Transistor 2SB1065DESCRIPTION Collector Saturation VoltageLow: V = -1.0V(Max)@I = -2ACE(sat) CWide Area of Safe OperationComplement to Type 2SD1506Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMB

8.17. Size:216K inchange semiconductor
2sb1069.pdf pdf_icon

isc Silicon PNP Power Transistor 2SB1069DESCRIPTIONLow Collector Saturation Voltage: V = -0.5V(Max)@I = -2ACE(sat) CHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low voltage switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage

Otros transistores... 2SB1055 , 2SB1056 , 2SB1057 , 2SB1058 , 2SB1059 , 2SB106 , 2SB1060 , 2SB1061 , 2SC2240 , 2SB1063 , 2SB1064 , 2SB1065 , 2SB1066 , 2SB1067 , 2SB1068 , 2SB1069 , 2SB107 .