2SB1062. Аналоги и основные параметры
Наименование производителя: 2SB1062
Тип материала: Si
Полярность: PNP
Предельные значения
Максимальная рассеиваемая мощность (Pc): 0.6 W
Макcимально допустимое напряжение коллектор-база (Ucb): 15 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 10 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 7 V
Макcимальный постоянный ток коллектора (Ic): 0.5 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 130 typ MHz
Ёмкость коллекторного перехода (Cc): 22 pf
Статический коэффициент передачи тока (hFE): 100
Корпус транзистора: SC71
Аналоги (замена) для 2SB1062
- подборⓘ биполярного транзистора по параметрам
2SB1062 даташит
8.8. Size:78K secos
2sb1068.pdf 
2SB1068 -2A , -20V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES G H Low Collector Saturation Voltage High DC Current Gain Emitter Collector High Collector Power Dissipation Base J Complementary of the 2SD1513 A D Millimeter REF. Min
8.9. Size:159K jmnic
2sb1063.pdf 
JMnic Product Specification Silicon PNP Power Transistors 2SB1063 DESCRIPTION With TO-220Fa package Complement to type 2SD1499 Wide area of safe operation High fT APPLICATIONS For high power amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-b
8.10. Size:149K jmnic
2sb1064.pdf 
JMnic Product Specification Silicon PNP Power Transistors 2SB1064 DESCRIPTION With TO-220 package Complement to type 2SD1505 Low collector saturation voltage APPLICATIONS Designed for use in low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol 3 Base
8.11. Size:160K jmnic
2sb1069 2sb1069a.pdf 
JMnic Product Specification Silicon PNP Power Transistors 2SB1069 2SB1069A DESCRIPTION With TO-220 package High speed switching Low collector saturation voltage APPLICATIONS For low-voltage switching applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol 3 Base Absolute maximum ratin
8.12. Size:154K jmnic
2sb1065.pdf 
JMnic Product Specification Silicon PNP Power Transistors 2SB1065 DESCRIPTION With TO-126 package Complement to type 2SD1506 Low collector saturation voltage APPLICATIONS For use in low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMET
8.13. Size:219K inchange semiconductor
2sb1063.pdf 
isc Silicon PNP Power Transistor 2SB1063 DESCRIPTION Low Collector Saturation Voltage- V = -2.0V(Max)@I = -3A CE(sat) C Good Linearity of h FE Wide Area of Safe Operation Complement to Type 2SD1499 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power amplification. ABSOLUTE MAXIMUM RATINGS(T =25 ) a
8.14. Size:217K inchange semiconductor
2sb1064.pdf 
isc Silicon PNP Power Transistor 2SB1064 DESCRIPTION Low Collector Saturation Voltage V = -1.0V(Max)@I = -2A CE(sat) C Wide Area of Safe Operation Complement to Type 2SD1505 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL P
8.15. Size:125K inchange semiconductor
2sb1069 2sb1069a.pdf 
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1069 2SB1069A DESCRIPTION With TO-220 package High speed switching Low collector saturation voltage APPLICATIONS For low-voltage switching applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol 3 Base Absol
8.16. Size:215K inchange semiconductor
2sb1065.pdf 
isc Silicon PNP Power Transistor 2SB1065 DESCRIPTION Collector Saturation Voltage Low V = -1.0V(Max)@I = -2A CE(sat) C Wide Area of Safe Operation Complement to Type 2SD1506 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMB
8.17. Size:216K inchange semiconductor
2sb1069.pdf 
isc Silicon PNP Power Transistor 2SB1069 DESCRIPTION Low Collector Saturation Voltage V = -0.5V(Max)@I = -2A CE(sat) C High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low voltage switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage
Другие транзисторы: 2SB1055, 2SB1056, 2SB1057, 2SB1058, 2SB1059, 2SB106, 2SB1060, 2SB1061, 2SA1015, 2SB1063, 2SB1064, 2SB1065, 2SB1066, 2SB1067, 2SB1068, 2SB1069, 2SB107
