2SB1062 Datasheet and Replacement

   Type Designator: 2SB1062
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.6 W
   Maximum Collector-Base Voltage |Vcb|: 15 V
   Maximum Collector-Emitter Voltage |Vce|: 10 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 0.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 130(typ) MHz
   Collector Capacitance (Cc): 22 pF
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: SC71

2SB1062 Substitution

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2SB1062 Datasheet (PDF)

..1. Size:57K no
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8.1. Size:185K toshiba
2sb1067.pdf pdf_icon

8.2. Size:150K nec
2sb1068.pdf pdf_icon

8.3. Size:46K rohm
2sb1066m 2sb1243.pdf pdf_icon

8.4. Size:39K rohm
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8.5. Size:39K rohm
2sb1065.pdf pdf_icon

8.6. Size:67K panasonic
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8.7. Size:411K hitachi
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8.8. Size:78K secos
2sb1068.pdf pdf_icon

2SB1068 -2A , -20V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES G H Low Collector Saturation Voltage High DC Current Gain EmitterCollector High Collector Power Dissipation Base J Complementary of the 2SD1513 A DMillimeter REF.Min

8.9. Size:159K jmnic
2sb1063.pdf pdf_icon

JMnic Product Specification Silicon PNP Power Transistors 2SB1063 DESCRIPTION With TO-220Fa package Complement to type 2SD1499 Wide area of safe operation High fT APPLICATIONS For high power amplifier applications PINNING PIN DESCRIPTION1 Emitter 2 Collector3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-b

8.10. Size:149K jmnic
2sb1064.pdf pdf_icon

JMnic Product Specification Silicon PNP Power Transistors 2SB1064 DESCRIPTION With TO-220 package Complement to type 2SD1505 Low collector saturation voltage APPLICATIONS Designed for use in low frequency power amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol3 Base

8.11. Size:160K jmnic
2sb1069 2sb1069a.pdf pdf_icon

JMnic Product Specification Silicon PNP Power Transistors 2SB1069 2SB1069A DESCRIPTION With TO-220 package High speed switching Low collector saturation voltage APPLICATIONS For low-voltage switching applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol3 BaseAbsolute maximum ratin

8.12. Size:154K jmnic
2sb1065.pdf pdf_icon

JMnic Product Specification Silicon PNP Power Transistors 2SB1065 DESCRIPTION With TO-126 package Complement to type 2SD1506 Low collector saturation voltage APPLICATIONS For use in low frequency power amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PARAMET

8.13. Size:219K inchange semiconductor
2sb1063.pdf pdf_icon

isc Silicon PNP Power Transistor 2SB1063DESCRIPTIONLow Collector Saturation Voltage-: V = -2.0V(Max)@I = -3ACE(sat) CGood Linearity of hFEWide Area of Safe OperationComplement to Type 2SD1499Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power amplification.ABSOLUTE MAXIMUM RATINGS(T =25)a

8.14. Size:217K inchange semiconductor
2sb1064.pdf pdf_icon

isc Silicon PNP Power Transistor 2SB1064DESCRIPTIONLow Collector Saturation Voltage: V = -1.0V(Max)@I = -2ACE(sat) CWide Area of Safe OperationComplement to Type 2SD1505Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL P

8.15. Size:125K inchange semiconductor
2sb1069 2sb1069a.pdf pdf_icon

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1069 2SB1069A DESCRIPTION With TO-220 package High speed switching Low collector saturation voltage APPLICATIONS For low-voltage switching applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol3 BaseAbsol

8.16. Size:215K inchange semiconductor
2sb1065.pdf pdf_icon

isc Silicon PNP Power Transistor 2SB1065DESCRIPTION Collector Saturation VoltageLow: V = -1.0V(Max)@I = -2ACE(sat) CWide Area of Safe OperationComplement to Type 2SD1506Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMB

8.17. Size:216K inchange semiconductor
2sb1069.pdf pdf_icon

isc Silicon PNP Power Transistor 2SB1069DESCRIPTIONLow Collector Saturation Voltage: V = -0.5V(Max)@I = -2ACE(sat) CHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low voltage switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage

Datasheet: 2SB1055 , 2SB1056 , 2SB1057 , 2SB1058 , 2SB1059 , 2SB106 , 2SB1060 , 2SB1061 , 2SC2240 , 2SB1063 , 2SB1064 , 2SB1065 , 2SB1066 , 2SB1067 , 2SB1068 , 2SB1069 , 2SB107 .