2SB1116A Todos los transistores

DATA SHEET SILICON TRANSISTORS 2SB1116, 1116A PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING FEATURES PACKAGE DRAWING (UNIT mm) Low VCE(sat) VCE(sat) = -0.20 V TYP. (IC = -1.0 A, IB = -50 mA) High PT in small dimension with general-purpose PT = 0.75 W, VCEO = -50/-60 V, IC(DC) = -1.0 A Complementary transistor with 2SD1616 and

UNISONIC TECHNOLOGIES CO., LTD 2SB1116/A PNP SILICON TRANSISTOR PNP EPITAXIAL SILICON TRANSISTOR DESCRIPTION Complement to UTC 2SD1616/A ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 - 2SB1116G-x-AB3-B SOT-89 B C E Tape Reel 2SB1116L-x-T92-B 2SB1116G-x-T92-B TO-92 E C B Tape Box 2SB1116L-x-T92-K 2SB1116G-x-T92-K TO-

2SB1116A -1 A, -80 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES High Collector Power Dissipation G H Complementary to 2SD1616A 1Emitter 1 1 1 2Collector 2 2 2 3Base 3 3 3 CLASSIFICATION OF hFE(1) J A D Product-Rank 2SB1116A-L 2SB1116A-K 2SB1116A-U

Transistors 2SB1116A

2SB1116 -1A , -60V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23 FEATURES High current surface mount PNP silicon switching transistor A for Load management in portable applications L 3 3 Top View C B CLASSIFICATION OF hFE 1 1 2 2 K E Product-Rank 2SB1116-L 2SB1116-K 2AB11

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 2 SB1116 TRANSISTOR (PNP) FEATURES High Collector Power Dissipation Complementary to 2SD1616 MARKING 1116 MAXIMUM RATINGS (TA=25 unless otherwise noted) 1. BASE Parameter Value Unit 2. EMITTER Symbol 3. COLLECTOR -60 VCBO Collector-Base Voltage V -50 VCEO Collector-

2SB1116/1116A(PNP) TO-92 Bipolar Transistors TO-92 1. EMITTER 2. COLLECTOR 3. BASE Features High Collector Power Dissipation . Complementary to 2SD1616/2SD1616A MAXIMUM RATINGS (TA=25 unless otherwise noted) Parameter Value Units Symbol Collector-Base Voltage 2SB1116 -60 VCBO V 2SB1116A -80 Collector-Emitter Voltage 2SB1116 -50 VCEO V 2SB1116A -60 -6

2SB1116/2SB1116A PNP General Purpose Transistor COLLECTOR 2 P b Lead(Pb)-Free 3 BASE 1 2 3 1 EMITTER TO-92 Maximum Ratings ( T =25 C unless otherwise noted) A Rating Symbol 1116 1116A Unit V Collector-Base Voltage CBO -60 -80 V V -50 Collector-Emitter Voltage CEO -60 V V EBO Emitter-Base Voltage -6.0 -6.0 V l 1000 Collector Current Continuous C mA THERMAL CHARACTE