DATA SHEETSILICON TRANSISTORS2SB1116, 1116APNP SILICON EPITAXIAL TRANSISTORFOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHINGFEATURES PACKAGE DRAWING (UNIT: mm) Low VCE(sat)VCE(sat) = -0.20 V TYP. (IC = -1.0 A, IB = -50 mA) High PT in small dimension with general-purposePT = 0.75 W, VCEO = -50/-60 V, IC(DC) = -1.0 A Complementary transistor with 2SD1616 and

UNISONIC TECHNOLOGIES CO., LTD 2SB1116/A PNP SILICON TRANSISTOR PNP EPITAXIAL SILICON TRANSISTOR DESCRIPTION Complement to UTC 2SD1616/A ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3- 2SB1116G-x-AB3-B SOT-89 B C E Tape Reel2SB1116L-x-T92-B 2SB1116G-x-T92-B TO-92 E C B Tape Box2SB1116L-x-T92-K 2SB1116G-x-T92-K TO-

2SB1116A -1 A, -80 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES High Collector Power Dissipation G H Complementary to 2SD1616A 1Emitter 1112Collector 2223Base 333CLASSIFICATION OF hFE(1) JA DProduct-Rank 2SB1116A-L 2SB1116A-K 2SB1116A-U

Transistors2SB1116A

2SB1116 -1A , -60V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23 FEATURES High current surface mount PNP silicon switching transistor Afor Load management in portable applications L33Top View C BCLASSIFICATION OF hFE 11 22K EProduct-Rank 2SB1116-L 2SB1116-K 2AB11

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate TransistorsSOT-23 2 SB1116 TRANSISTOR (PNP)FEATURES High Collector Power Dissipation Complementary to 2SD1616MARKING1116MAXIMUM RATINGS (TA=25 unless otherwise noted) 1. BASE Parameter Value Unit2. EMITTER Symbol 3. COLLECTOR-60VCBO Collector-Base Voltage V -50VCEO Collector-

2SB1116/1116A(PNP)TO-92 Bipolar TransistorsTO-92 1. EMITTER 2. COLLECTOR 3. BASE Features High Collector Power Dissipation . Complementary to 2SD1616/2SD1616A MAXIMUM RATINGS (TA=25 unless otherwise noted) Parameter Value UnitsSymbol Collector-Base Voltage 2SB1116 -60 VCBO V 2SB1116A -80 Collector-Emitter Voltage 2SB1116 -50 VCEO V 2SB1116A -60 -6

2SB1116/2SB1116APNP General Purpose TransistorCOLLECTOR2P b Lead(Pb)-Free3BASE1231EMITTERTO-92Maximum Ratings ( T =25 C unless otherwise noted)ARating Symbol 1116 1116A UnitVCollector-Base Voltage CBO -60 -80 VV -50Collector-Emitter Voltage CEO -60VVEBOEmitter-Base Voltage -6.0 -6.0 Vl 1000Collector Current Continuous C mATHERMAL CHARACTE