All Transistors. 2SB1116A Datasheet

 

2SB1116A Datasheet, Equivalent, Cross Reference Search

Type Designator: 2SB1116A

Material of Transistor: Si

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 0.75 W

Maximum Collector-Base Voltage |Vcb|: 80 V

Maximum Collector-Emitter Voltage |Vce|: 80 V

Maximum Emitter-Base Voltage |Veb|: 9 V

Maximum Collector Current |Ic max|: 1 A

Max. Operating Junction Temperature (Tj): 165 Ā°C

Transition Frequency (ft): 60 MHz

Forward Current Transfer Ratio (hFE), MIN: 80

Noise Figure, dB: -

Package: TO92

2SB1116A Transistor Equivalent Substitute - Cross-Reference Search

 

2SB1116A Datasheet (PDF)

1.1. 2sb1116 2sb1116a.pdf Size:102K _nec

2SB1116A
2SB1116A

DATA SHEET SILICON TRANSISTORS 2SB1116, 1116A PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING FEATURES PACKAGE DRAWING (UNIT: mm) • Low VCE(sat) VCE(sat) = -0.20 V TYP. (IC = -1.0 A, IB = -50 mA) • High PT in small dimension with general-purpose PT = 0.75 W, VCEO = -50/-60 V, IC(DC) = -1.0 A • Complementary transistor with 2SD1616 and 1616A AB

1.2. 2sb1116a.pdf Size:170K _secos

2SB1116A
2SB1116A

2SB1116A -1 A, -80 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of ā€œ-Cā€ specifies halogen & lead-free TO-92 FEATURES High Collector Power Dissipation G H Complementary to 2SD1616A 1Emitter 1 1 1 2Collector 2 2 2 3Base 3 3 3 CLASSIFICATION OF hFE(1) J A D Product-Rank 2SB1116A-L 2SB1116A-K 2SB1116A-U

1.3. 2sb1116a.pdf Size:143K _usha

2SB1116A
2SB1116A

Transistors 2SB1116A

Datasheet: 2SB1110D , 2SB1111 , 2SB1112 , 2SB1113 , 2SB1114 , 2SB1115 , 2SB1115A , 2SB1116 , 2N2219 , 2SB1117 , 2SB1118 , 2SB1118S , 2SB1118T , 2SB1118U , 2SB1119 , 2SB1119R , 2SB1119S .

 


2SB1116A
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