2SB1133S . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Ordering number : ENN3031A2SB1133 / 2SD1666PNP / NPN Triple Diffused Planar Silicon Transistors2SB1133 / 2SD1666Low-FrequencyGeneral-Purpose Amplifier ApplicationsFeaturesPackage Dimensions Wide ASO(Adoption of MBIT process).unit : mm Micaless package facilitating easy mounting.2041A High reliability.[2SB1133 / 2SD1666]4.510.02.83.22.41.61.20.7

2SB1133 PNP EPITAXIAL SILICON TRANSISTORPOWER AMPLIFIER VERTICAL DEFLECTION OUTPUT SC-67ABSOLUTE MAXIMUM RATINGS (T =25)ACharacteristic Symbol Rating Unit Collector-Base Voltage VCBO -60 V Collector-Emitter Voltage VCEO -60 V Emitter-Base voltage VEBO -5 V Collector Current (DC) IC -3 A Collector Dissipation (Tc=25 PC 20 W Junction Tem

JMnic Product Specification Silicon PNP Power Transistors 2SB1133 DESCRIPTION With TO-220F package Complement to type 2SD1666 Low collector saturation voltage Wide area of safe operation APPLICATIONS For low-frequency and general-purpose amplifier applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220F) and symbol3 Emitter

isc Silicon PNP Power Transistor 2SB1133DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -60V(Min)(BR)CEOGood Linearity of hFEWide Area of Safe OperationComplement to Type 2SD1666Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency and general purposeamplifier applications.ABSOLUTE MAX