2SB1133S - описание и поиск аналогов

Ordering number ENN3031A 2SB1133 / 2SD1666 PNP / NPN Triple Diffused Planar Silicon Transistors 2SB1133 / 2SD1666 Low-Frequency General-Purpose Amplifier Applications Features Package Dimensions Wide ASO(Adoption of MBIT process). unit mm Micaless package facilitating easy mounting. 2041A High reliability. [2SB1133 / 2SD1666] 4.5 10.0 2.8 3.2 2.4 1.6 1.2 0.7

2SB1133 PNP EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER VERTICAL DEFLECTION OUTPUT SC-67 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO -60 V Collector-Emitter Voltage VCEO -60 V Emitter-Base voltage VEBO -5 V Collector Current (DC) IC -3 A Collector Dissipation (Tc=25 PC 20 W Junction Tem

JMnic Product Specification Silicon PNP Power Transistors 2SB1133 DESCRIPTION With TO-220F package Complement to type 2SD1666 Low collector saturation voltage Wide area of safe operation APPLICATIONS For low-frequency and general-purpose amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220F) and symbol 3 Emitter

isc Silicon PNP Power Transistor 2SB1133 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -60V(Min) (BR)CEO Good Linearity of h FE Wide Area of Safe Operation Complement to Type 2SD1666 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency and general purpose amplifier applications. ABSOLUTE MAX