2SB1133S PDF and Equivalents Search

 

2SB1133S Specs and Replacement

Type Designator: 2SB1133S

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 25 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 60 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 3 A

Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics

Transition Frequency (ft): 40 MHz

Collector Capacitance (Cc): 110 pF

Forward Current Transfer Ratio (hFE), MIN: 140

Noise Figure, dB: -

Package: TO220F

 2SB1133S Substitution

- BJT ⓘ Cross-Reference Search

 

2SB1133S datasheet

 7.1. Size:30K  sanyo

2sb1133 2sd1666.pdf pdf_icon

2SB1133S

Ordering number ENN3031A 2SB1133 / 2SD1666 PNP / NPN Triple Diffused Planar Silicon Transistors 2SB1133 / 2SD1666 Low-Frequency General-Purpose Amplifier Applications Features Package Dimensions Wide ASO(Adoption of MBIT process). unit mm Micaless package facilitating easy mounting. 2041A High reliability. [2SB1133 / 2SD1666] 4.5 10.0 2.8 3.2 2.4 1.6 1.2 0.7... See More ⇒

 7.2. Size:69K  wingshing

2sb1133.pdf pdf_icon

2SB1133S

2SB1133 PNP EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER VERTICAL DEFLECTION OUTPUT SC-67 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO -60 V Collector-Emitter Voltage VCEO -60 V Emitter-Base voltage VEBO -5 V Collector Current (DC) IC -3 A Collector Dissipation (Tc=25 PC 20 W Junction Tem... See More ⇒

 7.3. Size:188K  jmnic

2sb1133.pdf pdf_icon

2SB1133S

JMnic Product Specification Silicon PNP Power Transistors 2SB1133 DESCRIPTION With TO-220F package Complement to type 2SD1666 Low collector saturation voltage Wide area of safe operation APPLICATIONS For low-frequency and general-purpose amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220F) and symbol 3 Emitter... See More ⇒

 7.4. Size:213K  inchange semiconductor

2sb1133.pdf pdf_icon

2SB1133S

isc Silicon PNP Power Transistor 2SB1133 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -60V(Min) (BR)CEO Good Linearity of h FE Wide Area of Safe Operation Complement to Type 2SD1666 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency and general purpose amplifier applications. ABSOLUTE MAX... See More ⇒

Detailed specifications: 2SB1131S, 2SB1131T, 2SB1132P, 2SB1132Q, 2SB1132R, 2SB1133, 2SB1133Q, 2SB1133R, 2N2222, 2SB1134, 2SB1134Q, 2SB1134R, 2SB1134S, 2SB1135, 2SB1135Q, 2SB1135R, 2SB1135S

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