2SB1218 Todos los transistores

 

2SB1218 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SB1218

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.5 W

Tensión colector-base (Vcb): 25 V

Tensión emisor-base (Veb): 9 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 195 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 40 MHz

Ganancia de corriente contínua (hFE): 120

Encapsulados: TO236

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2SB1218 datasheet

 0.1. Size:52K  panasonic
2sb1218a e.pdf pdf_icon

2SB1218

Transistor 2SB1218A Silicon PNP epitaxial planer type For general amplification Unit mm Complementary to 2SD1819A 2.1 0.1 0.425 1.25 0.1 0.425 Features High foward current transfer ratio hFE. 1 S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine 3 packing. 2 Absolute Maximum Ratings (Ta=25 C) Paramet

 0.2. Size:48K  panasonic
2sb1218a.pdf pdf_icon

2SB1218

Transistor 2SB1218A Silicon PNP epitaxial planer type For general amplification Unit mm Complementary to 2SD1819A 2.1 0.1 0.425 1.25 0.1 0.425 Features High foward current transfer ratio hFE. 1 S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine 3 packing. 2 Absolute Maximum Ratings (Ta=25 C) Paramet

 0.3. Size:102K  secos
2sb1218a.pdf pdf_icon

2SB1218

2SB1218A -0.1A , -60V PNP Silicon Epitaxial Paner Transistors Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free APPLICATIONS SOT-323 General Purpose Amplification A L 3 FEATURES 3 Top View C B High DC Current Gain 1 Complementary to 2SD1819A 1 2 2 K E CLASSIFICATION OF hFE D Product-Rank 2SB1218A-Q

 0.4. Size:295K  htsemi
2sb1218a.pdf pdf_icon

2SB1218

2SB1 21 8 A TRANSISTOR(PNP) FEATURES SOT 323 High DC Current Gain Complementary to 2SD1819A APPLICATIONS General Purpose Amplification MAXIMUM RATINGS (Ta=25 unless otherwise noted) 1. BASE Symbol Parameter Value Unit 2. EMITTER V Collector-Base Voltage -45 V CBO 3. COLLECTOR VCEO Collector-Emitter Voltage -45 V V Emitter-Base Voltage -7 V EBO I

Otros transistores... 2SB1215S , 2SB1215T , 2SB1216 , 2SB1216Q , 2SB1216R , 2SB1216S , 2SB1216T , 2SB1217 , NJW0281G , 2SB1218A , 2SB1219 , 2SB1219A , 2SB122 , 2SB1220 , 2SB1221 , 2SB1222 , 2SB1223 .

History: FTD880

 

 

 

 

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