Transistor2SB1218ASilicon PNP epitaxial planer typeFor general amplificationUnit: mmComplementary to 2SD1819A2.1 0.10.425 1.25 0.1 0.425FeaturesHigh foward current transfer ratio hFE. 1S-Mini type package, allowing downsizing of the equipment andautomatic insertion through the tape packing and the magazine3packing.2Absolute Maximum Ratings (Ta=25C)Paramet

Transistor2SB1218ASilicon PNP epitaxial planer typeFor general amplificationUnit: mmComplementary to 2SD1819A2.1 0.10.425 1.25 0.1 0.425FeaturesHigh foward current transfer ratio hFE. 1S-Mini type package, allowing downsizing of the equipment andautomatic insertion through the tape packing and the magazine3packing.2Absolute Maximum Ratings (Ta=25C)Paramet

2SB1218A -0.1A , -60V PNP Silicon Epitaxial Paner Transistors Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free APPLICATIONS SOT-323 General Purpose Amplification AL3FEATURES 3Top View C B High DC Current Gain 1 Complementary to 2SD1819A 1 22K ECLASSIFICATION OF hFE DProduct-Rank 2SB1218A-Q

2SB1 21 8 ATRANSISTOR(PNP)FEATURES SOT323 High DC Current Gain Complementary to 2SD1819A APPLICATIONS General Purpose Amplification MAXIMUM RATINGS (Ta=25 unless otherwise noted) 1. BASE Symbol Parameter Value Unit 2. EMITTER V Collector-Base Voltage -45 V CBO3. COLLECTOR VCEO Collector-Emitter Voltage -45 V V Emitter-Base Voltage -7 V EBOI

SMD Type TransistorsPNP Transistors2SB1218A Features High DC Current Gain Complementary to 2SD1819A1 Base2 Emitter3 Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -45 Collector - Emitter Voltage VCEO -45 V Emitter - Base Voltage VEBO -7 Collector Current - Continuous IC -100 mA Collector Power D