2SB1218 - описание и поиск аналогов

Transistor 2SB1218A Silicon PNP epitaxial planer type For general amplification Unit mm Complementary to 2SD1819A 2.1 0.1 0.425 1.25 0.1 0.425 Features High foward current transfer ratio hFE. 1 S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine 3 packing. 2 Absolute Maximum Ratings (Ta=25 C) Paramet

Transistor 2SB1218A Silicon PNP epitaxial planer type For general amplification Unit mm Complementary to 2SD1819A 2.1 0.1 0.425 1.25 0.1 0.425 Features High foward current transfer ratio hFE. 1 S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine 3 packing. 2 Absolute Maximum Ratings (Ta=25 C) Paramet

2SB1218A -0.1A , -60V PNP Silicon Epitaxial Paner Transistors Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free APPLICATIONS SOT-323 General Purpose Amplification A L 3 FEATURES 3 Top View C B High DC Current Gain 1 Complementary to 2SD1819A 1 2 2 K E CLASSIFICATION OF hFE D Product-Rank 2SB1218A-Q

2SB1 21 8 A TRANSISTOR(PNP) FEATURES SOT 323 High DC Current Gain Complementary to 2SD1819A APPLICATIONS General Purpose Amplification MAXIMUM RATINGS (Ta=25 unless otherwise noted) 1. BASE Symbol Parameter Value Unit 2. EMITTER V Collector-Base Voltage -45 V CBO 3. COLLECTOR VCEO Collector-Emitter Voltage -45 V V Emitter-Base Voltage -7 V EBO I

SMD Type Transistors PNP Transistors 2SB1218A Features High DC Current Gain Complementary to 2SD1819A 1 Base 2 Emitter 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -45 Collector - Emitter Voltage VCEO -45 V Emitter - Base Voltage VEBO -7 Collector Current - Continuous IC -100 mA Collector Power D