All Transistors. 2SB1218 Datasheet

 

2SB1218 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SB1218
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.5 W
   Maximum Collector-Base Voltage |Vcb|: 25 V
   Maximum Emitter-Base Voltage |Veb|: 9 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 195 °C
   Transition Frequency (ft): 40 MHz
   Forward Current Transfer Ratio (hFE), MIN: 120
   Noise Figure, dB: -
   Package: TO236

 2SB1218 Transistor Equivalent Substitute - Cross-Reference Search

   

2SB1218 Datasheet (PDF)

 0.1. Size:52K  panasonic
2sb1218a e.pdf

2SB1218
2SB1218

Transistor2SB1218ASilicon PNP epitaxial planer typeFor general amplificationUnit: mmComplementary to 2SD1819A2.1 0.10.425 1.25 0.1 0.425FeaturesHigh foward current transfer ratio hFE. 1S-Mini type package, allowing downsizing of the equipment andautomatic insertion through the tape packing and the magazine3packing.2Absolute Maximum Ratings (Ta=25C)Paramet

 0.2. Size:48K  panasonic
2sb1218a.pdf

2SB1218
2SB1218

Transistor2SB1218ASilicon PNP epitaxial planer typeFor general amplificationUnit: mmComplementary to 2SD1819A2.1 0.10.425 1.25 0.1 0.425FeaturesHigh foward current transfer ratio hFE. 1S-Mini type package, allowing downsizing of the equipment andautomatic insertion through the tape packing and the magazine3packing.2Absolute Maximum Ratings (Ta=25C)Paramet

 0.3. Size:102K  secos
2sb1218a.pdf

2SB1218

2SB1218A -0.1A , -60V PNP Silicon Epitaxial Paner Transistors Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free APPLICATIONS SOT-323 General Purpose Amplification AL3FEATURES 3Top View C B High DC Current Gain 1 Complementary to 2SD1819A 1 22K ECLASSIFICATION OF hFE DProduct-Rank 2SB1218A-Q

 0.4. Size:295K  htsemi
2sb1218a.pdf

2SB1218

2SB1 21 8 ATRANSISTOR(PNP)FEATURES SOT323 High DC Current Gain Complementary to 2SD1819A APPLICATIONS General Purpose Amplification MAXIMUM RATINGS (Ta=25 unless otherwise noted) 1. BASE Symbol Parameter Value Unit 2. EMITTER V Collector-Base Voltage -45 V CBO3. COLLECTOR VCEO Collector-Emitter Voltage -45 V V Emitter-Base Voltage -7 V EBOI

 0.5. Size:1114K  kexin
2sb1218a.pdf

2SB1218
2SB1218

SMD Type TransistorsPNP Transistors2SB1218A Features High DC Current Gain Complementary to 2SD1819A1 Base2 Emitter3 Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -45 Collector - Emitter Voltage VCEO -45 V Emitter - Base Voltage VEBO -7 Collector Current - Continuous IC -100 mA Collector Power D

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: 2SB1342

 

 
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