2SB1282 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SB1282
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 25 W
Tensión colector-base (Vcb): 100 V
Tensión colector-emisor (Vce): 100 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 4 A
Temperatura operativa máxima (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 25 MHz
Ganancia de corriente contínua (hfe): 2000
Paquete / Cubierta: TO126
Búsqueda de reemplazo de transistor bipolar 2SB1282
2SB1282 Datasheet (PDF)
2sb1282.pdf
SHINDENGENDarlington TransistorOUTLINE DIMENSIONS2SB1282 Case : ITO-220Unit : mm(TP4J10)4A PNPRATINGS
2sb1288.pdf
Transistor2SB1288Silicon PNP epitaxial planer typeFor low-frequency power amplificationUnit: mmFor DC-DC converter5.0 0.2 4.0 0.2For stroboscopeFeaturesLow collector to emitter saturation voltage VCE(sat).Large collector current IC.0.7 0.1Allowing supply with the radial taping.Absolute Maximum Ratings (Ta=25C)+0.15 +0.150.45 0.1 0.45 0.1Parameter Sy
2sb1288 e.pdf
Transistor2SB1288Silicon PNP epitaxial planer typeFor low-frequency power amplificationUnit: mmFor DC-DC converter5.0 0.2 4.0 0.2For stroboscopeFeaturesLow collector to emitter saturation voltage VCE(sat).Large collector current IC.0.7 0.1Allowing supply with the radial taping.Absolute Maximum Ratings (Ta=25C)+0.15 +0.150.45 0.1 0.45 0.1Parameter Sy
2sb1285.pdf
SHINDENGENDarlington TransistorOUTLINE DIMENSIONS2SB1285 Case : MTO-3PUnit : mm(T15J10)-15A PNPRATINGS
2sb1283.pdf
SHINDENGENDarlington TransistorOUTLINE DIMENSIONS2SB1283 Case : ITO-220Unit : mm(TP7J10)A PNPRATINGS
2sb1284.pdf
SHINDENGENDarlington TransistorOUTLINE DIMENSIONS2SB1284 Case : ITO-220Unit : mm(TP10J10)A PNPRATINGS
2sb1283.pdf
isc Silicon PNP Darlingtion Power Transistor 2SB1283DESCRIPTIONHigh DC Current Gain-: h = 1500(Min.)@I = -3AFE CLow Collector Saturation Voltage-: V = -1.5V(Max)@I = -3ACE(sat) CGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh power switching applications.Hammer drive, pulse motor drive
2sb1287.pdf
isc Silicon PNP Darlington Power Transistor 2SB1287DESCRIPTIONHigh DC Current Gain-:h = 1000(Min)@ I = -1AFE CCollector-Emitter Breakdown Voltage-:V = -100V(Min)(BR)CEOLow Collector-Emitter Saturation Voltage:V = -1.5V(Max)@ I = -1ACE(sat) CComplement to Type 2SD1765Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATION
2sb1284.pdf
isc Silicon PNP Darlingtion Power Transistor 2SB1284DESCRIPTIONHigh DC Current Gain-: h = 1500(Min.)@I = -5AFE CLow Collector Saturation Voltage-: V = -1.5V(Max)@I = -5ACE(sat) CGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh power switching applications.Hammer drive, pulse motor drive
2sb1289.pdf
isc Silicon PNP Power Transistor 2SB1289DESCRIPTIONHigh Collector Current:: I = -7ACLow Collector Saturation Voltage: V = -1.0V(Max)@I = -4ACE(sat) CWide Area of Safe OperationComplement to Type 2SD1580Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE
2sb1286.pdf
isc Silicon PNP Darlington Power Transistor 2SB1286DESCRIPTIONHigh DC Current Gain-:h = 1000(Min)@ I = -1AFE CCollector-Emitter Breakdown Voltage-:V = -100V(Min)(BR)CEOLow Collector-Emitter Saturation Voltage:V = -1.5V(Max)@ I = -1ACE(sat) CComplement to Type 2SD1646Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATION
Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
Liste
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